PRTR5V0U4D All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 5 March 2012 4 of 10
NXP Semiconductors
PRTR5V0U4D
Ultra low capacitance quadruple rail-to-rail ESD protection
6. Characteristics
[1] Measured from pins 1, 3, 4 and 6 to pin 2.
[2] Measured from pin 5 to pin 2.
7. Application information
The device is designed for the protection of for example, two USB 2.0 ports against ESD.
Each device is capable to protect both, USB data lines and the V
BUS
supply.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Table 8. Characteristics
T
amb
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per channel
I
RM
reverse leakage current V
R
=3V
[1]
- - 100 nA
C
(I/O-GND)
input/output to ground
capacitance
V
(I/O-GND)
=0V;
V
CC
=3V; f=1MHz
[1]
-1.0-pF
V
F
forward voltage - 0.7 - V
Zener diode
V
I
input voltage 0 - 5.5 V
V
BR
breakdown voltage I
I
=1mA 6- 9V
C
sup
supply pin to ground
capacitance
V
(I/O-GND)
=0V;
V
CC
=3V; f=1MHz
[2]
-40-pF
Fig 2. Application diagram
001aah387
4
USB 2.0
IEEE1394
CONTROLLER
5
6
3
2
1
V
BUS
V
BUS
D+
D−
GND
V
BUS
D+
D−
GND
