Product Standards
Transistors with Built-in Resistor
DRC2523Y0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1.
Page
Parameter Symbol Rating
Operating ambient temperature Topr -40 to
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open)
Emitter
+85 °C
Unit
Panasonic
50 V
Mini3-G3-B
JEITA SC-59A
TH
Code
1. Base
2.
Embossed type (Thermo-compression sealing) : 3 000
TO-236AA/SOT-23
pcs / reel (standard)
3. Collector
DRC2523Y0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA2523Y
Features
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
Packaging
Marking Symbol:
1of
R1
2.2
k
R2
10
k
3
Unit
Unit: mm
Min Typ
Internal Connection
Resistance
value
Max
VCEO 50 V
Collector current IC 500 mA
Total power dissipation PT 200 mW
Junction temperature Tj 150 °C
+150 °C
Parameter Symbol Conditions
Storage temperature Tstg -55 to
Collector-base voltage (Emitter open) VCBO 50 IC = 10 μA, IE = 0 V
Input voltage
Collector-base cutoff current (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base cutoff current (Collector open)
Collector-emitter cutoff current (Base open)
1 μA
Resistance ratio
Input resistance
VCE = 5 V, IC = 100 μA
Collector-emitter saturation voltage
Forward current transfer ratio hFE VCE = 10 V, IC = 100 mA 60
VCE = 50 V, IB = 0
V
1 μA
VCEO IC = 2 mA, IB = 0 50
1
ICBO VCB = 50 V, IE = 0
IEBO VEB = 6 V, IC = 0
ICEO
mA
-
0.25 V IC = 100 mA, IB = 5 mA
Vi(on) VCE = 0.2 V, IC = 50 mA V1.9
VCE(sat)
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
0.27 -R1/R2 0.17 0.22
k
0.4 V
R1 2.2 +30%
Vi(off)
-30%
2.8
2.9
1.1
1.5
0.4
1.9
0.16
1
3
(0.95)(0.95)
2
C
B
R
1
R
2
E
