OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BUK9Y40-55B,115

P1-P3P4-P6P7-P9P10-P12P13-P13
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features
1.3 Applications
1.4 Quick reference data
BUK9Y40-55B
N-channel TrenchMOS logic level FET
Rev. 03 — 22 February 2008 Product data sheet
175 °C rated Logic level compatible
Q101 compliant Very low on-state resistance
12 V and 24 V loads Automotive systems
General purpose power switching Motors, lamps and solenoids
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
I
D
drain current V
GS
=5V; T
mb
=25°C;
see Figure 1 and 4
--26A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 --59W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=5V; I
D
=15A;
T
j
=25°C; see Figure 12 and
13
- 3440mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
I
D
=26A; V
sup
≤ 55 V;
R
GS
=50Ω; V
GS
=5V;
T
j(init)
=25°C; unclamped
--36mJ
BUK9Y40-55B_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 22 February 2008 2 of 12
NXP Semiconductors
BUK9Y40-55B
N-channel TrenchMOS logic level FET
2. Pinning information
3. Ordering information
4. Limiting values
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[2] Repetitive avalanche rating limited by average junction temperature of 170 °C.
[3] Refer to application note AN10273 for further information.
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 S source
SOT669 (LFPAK)
2 S source
3 S source
4 G gate
mb D mounting base;
connected to drain
mb
1234
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
BUK9Y40-55B LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C-55V
V
DGR
drain-gate voltage R
GS
=20kΩ -55V
V
GS
gate-source voltage -15 15 V
I
D
drain current T
mb
= 100 °C; V
GS
= 5 V; see Figure 1 -18A
T
mb
=25°C; V
GS
= 5 V; see Figure 1 and 4 -26A
I
DM
peak drain current T
mb
=25°C; t
p
≤ 10 μs; pulsed; see Figure 4 - 106 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 -59W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
I
D
=26A; V
sup
≤ 55 V; R
GS
=50Ω; V
GS
=5V;
T
j(init)
=25°C; unclamped
-36mJ
E
DS(AL)R
repetitive drain-source
avalanche energy
see Figure 3
[1][2]
[3]
--J
Source-drain diode
I
S
source current T
mb
=25°C-26A
I
SM
peak source current t
p
≤ 10 μs; pulsed; T
mb
=25°C - 106 A
P1-P3P4-P6P7-P9P10-P12P13-P13

BUK9Y40-55B,115

Mfr. #:
Buy BUK9Y40-55B,115
Manufacturer:
Nexperia
Description:
MOSFET 36mOhms N-Channel
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet