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IXFP270N06T3

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA270N06T3 IXFP270N06T3
IXFH270N06T3
Fig. 11. Capacitance
10
100
1000
10000
100000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
110100
V
DS
- Volts
I
D
- Amperes
100µs
1ms
10ms
R
DS(on)
Limit
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
DC
External Lead Limit
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
V
DS
= 10V
25ºC
- 40ºC
Fig. 8. Transconductance
0
40
80
120
160
200
240
280
0 20 40 60 80 100 120 140 160
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
150ºC
25ºC
V
DS
= 10V
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 30V
I
D
= 135A
I
G
= 10mA
© 2016 IXYS CORPORATION, All Rights Reserved
IXFA270N06T3 IXFP270N06T3
IXFH270N06T3
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
32
33
34
35
36
37
38
39
120 140 160 180 200 220 240 260 280
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 150ºC
R
G
= 3 , V
GS
= 10V
V
DS
= 30V
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
0
100
200
300
400
500
600
2 4 6 8 10 12 14 16 18
R
G
- Ohms
t
r
- Nanoseconds
0
25
50
75
100
125
150
t
d(on)
- Nanoseconds
t
r
t
d(on)
T
J
= 150ºC, V
GS
= 10V
V
DS
= 30V
I
D
= 135A
I
D
= 270A
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
18
19
20
21
22
23
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f
- Nanoseconds
40
45
50
55
60
65
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 3, V
GS
= 10V
V
DS
= 30V
I
D
= 270A
I
D
= 135A
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
32
33
34
35
36
37
38
39
40
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3 , V
GS
= 10V
V
DS
= 30V
I
D
= 270A
I
D
= 135A
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
19
20
21
22
23
120 140 160 180 200 220 240 260 280
I
D
- Amperes
t
f
- Nanoseconds
30
40
50
60
70
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 3, V
GS
= 10V
V
DS
= 30V
T
J
= 25ºC
T
J
= 150ºC
T
J
= 25ºC
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
0
50
100
150
200
250
300
2 4 6 8 10 12 14 16 18
R
G
- Ohms
t
f
- Nanoseconds
0
50
100
150
200
250
300
t
d(off)
- Nanoseconds
t
f
t
d(off)
T
J
= 150ºC, V
GS
= 10V
V
DS
= 30V
I
D
= 270A, 135A
I
D
= 270A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA270N06T3 IXFP270N06T3
IXFH270N06T3
Fig. 19. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
IXYS REF: F_270N06T3(U6-M05) 1-27-16
TO-263 Outline
1 = Gate
2,4 = Drain
3 = Source
A1
E1
A
c
c2
e
b
D
L
b2
D1
L3
L4
L1
1 2 3
E
4
0
- 8
TO-247 Outline
S
T
U
R
E
0P
E2
b2
b4
L1
A2
E2/2
Q
D
BOTTOM FLATNESS
b
c
e
L
A1
1 2 3
A
4
W
1 = Gate
2,4 = Drain
3 = Source
TO-220 Outline
1 = Gate
2,4 = Drain
3 = Source
E
e
Q
L
H1
L1
D1
e1
A2
A1
(D2)
(E1)
c
4
EJECTOR
PIN
1 2 3
3X b2
3X b
A
D
0P
L2
L1
P1-P3P4-P6

IXFP270N06T3

Mfr. #:
Buy IXFP270N06T3
Manufacturer:
Littelfuse
Description:
MOSFET 60V/270A TrenchT3
Lifecycle:
New from this manufacturer.
Delivery:
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