CQ220-25B
CQ220-25D
CQ220-25M
CQ220-25N
25 AMP TRIAC
200 THRU 800 VOLTS
TO-220 CASE
Central
Semiconductor Corp.
TM
R2 (24-September 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ220-25B
series type is an Epoxy Molded Silicon Triac
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (T
C
=25°C unless otherwise noted)
SYMBOL CQ220 CQ220 CQ220 CQ220
-25B -25D -25M -25N UNITS
Peak Repetitive Off-State Voltage V
DRM
200 400 600 800 V
RMS On-State Current (T
C
=90°C) I
T(RMS)
25 A
Peak One Cycle Surge (t=8.3ms) I
TSM
150 A
I
2
t Value for Fusing (t=8.3ms) I
2
t94A
2
s
Peak Gate Power (tp=10µs) P
GM
40 W
Average Gate Power Dissipation P
G (AV)
1.0 W
Peak Gate Current (tp=10µs) I
GM
10 A
Peak Gate Voltage (tp=10µs) V
GM
16 V
Critical Rate of Rise of On-State Current
Repetitive (f=60Hz) di/dt 10 A/µs
Storage Temperature T
stg
-40 to +150 °C
Junction Temperature T
J
-40 to +125 °C
Thermal Resistance Θ
JA
60 °C/W
Thermal Resistance Θ
JC
1.7 °C/W
ELECTRICAL CHARACTERISTICS: (T
C
=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
DRM
Rated V
DRM
10 µA
I
DRM
Rated V
DRM
, T
C
=125°C 2.0 mA
I
GT
V
D
=12V, R
L
=10Ω, QUAD I, II, III 11.1 30 mA
I
GT
V
D
=12V, R
L
=10Ω, QUAD IV 28.2 60 mA
I
H
I
T
=100mA 18.4 50 mA
V
GT
V
D
=12V, R
L
=10Ω, QUAD I, II, III 1.03 1.50 V
V
GT
V
D
=12V, R
L
=10Ω, QUAD IV 1.74 2.50 V
V
TM
I
TM
=35A, tp=380µs 1.80 V
dv/dt V
D
=
2
/
3
V
DRM
, R
GK
=∞, T
C
=125°C 6.0 V/µs
