ISL6161IBZA-T

4
FN9104.5
December 3, 2015
Absolute Maximum Ratings T
A
= +25°C Thermal Information
V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +16V
12VG, C
PUMP
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 21V
12VISEN, 12VS . . . . . . . . . . . . . . . . . . . . . . . . . . -5V to V
DD
+ 0.3V
3VISEN, 3VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -5V to 7.5V
PGOOD, R
ILIM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7.5V
ENABLE
, C
TIM
, 3VG . . . . . . . . . . . . . . . . . . . . . -0.3V to V
DD
+ 0.3V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2kV (Class 2)
Operating Conditions
V
DD
Supply Voltage Range . . . . . . . . . . . . . . . . . . +10.5V to +13.2V
Temperature Range (T
A
)
ISL6161IB. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C
ISL6161CB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to +70°C
Thermal Resistance (Typical, Note 1)
JA
(°C/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Maximum Junction Temperature (Plastic Package) . . . . . . . +150°C
Maximum Storage Temperature Range . . . . . . . . . .-65°C to +150°C
Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
1.
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2. All voltages are relative to GND, unless otherwise specified.
Electrical Specifications V
DD
= 12V, C
VG
= 0.01µF, C
TIM
= 0.1µF, R
SENSE
= 0.1, C
BULK
= 220µF, ESR = 0.5, T
A
= T
J
= -40°C to
+85°C, Unless Otherwise Specified. Parameters with MIN and/or MAX limits are 100% tested at +25°C,
unless otherwise specified. Temperature limits established by characterization and are not
production tested.
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
12V CONTROL SECTION
Current Limit Threshold Voltage
(Voltage Across Sense Resistor)
V
IL12V
R
ILIM
= 10k 92 100 108 mV
R
ILIM
= 5k 47 53 59 mV
3x Current Limit Threshold Voltage
(Voltage Across Sense Resistor)
3 x V
IL12V
R
ILIM
= 10k 250 300 350 mV
R
ILIM
= 5k 100 165 210 mV
±20% Current Limit Response Time
(Current within 20% of Regulated Value)
20%iLrt 200% Current Overload, R
ILIM
= 10k,
R
SHORT
= 6.0
-2-µs
±10% Current Limit Response Time
(Current within 10% of Regulated Value)
10%iLrt 200% Current Overload, R
ILIM
= 10k,
R
SHORT
= 6.0
-4-µs
±1% Current Limit Response Time
(Current within 1% of Regulated Value)
1%iLrt 200% Current Overload, R
ILIM
= 10k,
R
SHORT
= 6.0
-10-µs
Response Time to Dead Short RT
SHORT
C
12VG
= 0.01µF - 500 - ns
Gate Turn-On Time t
ON12V
C
12VG
= 0.01µF - 12 - ms
Gate Turn-On Current I
ON12V
C
12VG
= 0.01µF 8 10 12 µA
3x Gate Discharge Current 3XdisI 12VG = 18V - 0.75 - A
12V Undervoltage Threshold 12V
VUV
10.5 10.8 11.0 V
Charge Pumped 12VG Voltage V12VG C
PUMP
= 0.1µF 16.8 17.3 17.9 V
3.3V CONTROL SECTION
Current Limit Threshold Voltage
(Voltage Across Sense Resistor)
V
IL3V
R
ILIM
= 10k 92 100 108 mV
R
ILIM
= 5k 47 53 59 mV
3x Current Limit Threshold Voltage
(Voltage Across Sense Resistor)
3 x V
IL3V
R
ILIM
= 10k 250 300 350 mV
R
ILIM
= 5k 100 155 210 mV
±20% Current Limit Response Time
(Current within 20% of Regulated Value)
200% Current Overload, R
ILIM
= 10k,
R
SHORT
= 2.5
-2-µs
±10% Current Limit Response Time
(Current within 10% of Regulated Value)
200% Current Overload, R
ILIM
= 10k,
R
SHORT
= 2.5
-4-µs
ISL6161
5
FN9104.5
December 3, 2015
ISL6161 Description and Operation
The ISL6161 is a multi-featured +12V and +3.3V dual power
supply distribution controller. Its features include programmable
current regulation (CR) limiting and time to latch off.
At turn-on, the gate capacitor of each external N-Channel
MOSFET is charged with a 10µA current source. These
capacitors create a programmable ramp (soft turn-on). A
charge pump supplies the gate drive for the 12V supply control
FET switch driving that gate to 17V.
The load currents pass through two external current sense
resistors. When the voltage across either resistor quickly
exceeds the user programmed Current Regulation voltage
threshold (CRVth) level, the controller enters current regulation.
The CRVth is set by the external resistor value on R
ILIM
pin. At
this time, the time-out capacitor, C
TIM
, starts charging with a
10µA current source and the controller enters the time-out
period. The length of the time-out period is set by the single
external capacitor (see Table 2) placed from the C
TIM
pin
(pin 10) to ground and is characterized by a lowered gate drive
voltage to the appropriate external N-Channel MOSFET. Once
C
TIM
charges to 2V, an internal comparator is tripped resulting
in both N-Channel MOSFETs being latched off. If the voltage
across the sense resistors rises slowly in response to an OC
condition, then the CR mode is entered at ~95% of the
programmed CR level. This difference is due to the necessary
hysteresis and response time in the CR control circuitry.
Table 1 shows R
SENSE
and R
ILIM
recommendations and
resulting CR level for the PCI-Express add-in card connector
sizes specified.
±1% Current Limit Response Time
(Current within 1% of Regulated Value)
200% Current Overload, R
ILIM
= 10k,
R
SHORT
= 2.5
-10-µs
Response Time To Dead Short RT
SHORT
C
VG
= 0.01µF - 500 ns
Gate Turn-On Time t
ON3V
C
VG
= 0.01µF - 5 - ms
Gate Turn-On Current I
ON3V
C
VG
= 0.01µF 8 10 12 µA
3x Gate Discharge Current 3xdisI C
VG
= 0.01µF, ENABLE = Low 0.75 - A
3.3V Undervoltage Threshold 3.3V
VUV
2.7 2.85 3.0 V
3.3VG High Voltage 3VG 11.2 11.9 - V
SUPPLY CURRENT AND IO SPECIFICATIONS
V
DD
Supply Current I
VDD
4810mA
V
DD
POR Rising Threshold 9.5 10.0 10.7 V
V
DD
POR Falling Threshold 9.0 9.4 9.8 V
Current Limit Time-Out t
ILIM
C
TIM
= 0.1µF - 20 - ms
ENABLE
Pull-up Voltage PWRN_V ENABLE pin open 1.8 2.4 3.2 V
ENABLE
Rising Threshold PWR_Vth 1.1 1.5 2 V
ENABLE
Hysteresis PWR_hys 0.1 0.2 0.3 V
ENABLE
Pull-Up Current PWRN_I 60 80 100 µA
Current Limit Time-Out Threshold (C
TIM
)C
TIM
_Vth 1.8 2 2.2 V
C
TIM
Charging Current C
TIM
_I 8 10 12 µA
C
TIM
Discharge Current C
TIM
_disI 1.7 2.6 3.5 mA
C
TIM
Pull-Up Current C
TIM
_disI V
CTIM
= 8V 3.5 5 6.5 mA
R
ILIM
Pin Current Source Output R
ILIM
_Io 90 100 110 µA
Charge Pump Output Current Qpmp_Io C
PUMP
= 0.1µF, C
PUMP
= 16V 320 560 900 µA
Charge Pump Output Voltage Qpmp_Vo No load 17.2 17.4 - V
Charge Pump Output Voltage - Loaded Qpmp_VIo Load current = 100µA 16.2 16.7 - V
Charge Pump POR Rising Threshold Qpmp + Vth 15.6 16 16.5 V
Charge Pump POR Falling Threshold Qpmp - Vth 15.2 15.7 16.2 V
Electrical Specifications V
DD
= 12V, C
VG
= 0.01µF, C
TIM
= 0.1µF, R
SENSE
= 0.1, C
BULK
= 220µF, ESR = 0.5, T
A
= T
J
= -40°C to
+85°C, Unless Otherwise Specified. Parameters with MIN and/or MAX limits are 100% tested at +25°C,
unless otherwise specified. Temperature limits established by characterization and are not
production tested. (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ISL6161
6
FN9104.5
December 3, 2015
.
The ISL6161 responds to a load short (defined as a current
level 3x the OC set point with a fast transition) by
immediately driving the relevant N-Channel MOSFET gate to
0V in ~3µs. The gate voltage is then slowly ramped up,
soft-starting the N-Channel MOSFET to the programmed
current regulation limit level. This is the start of the time-out
period if the abnormal load condition still exists. The
programmed current regulation level is held until either the
OC event passes or the time-out period expires. If the former
is the case, then the N-Channel MOSFET is fully enhanced
and the C
TIM
charging current is diverted away from the
capacitor. If the time-out period expires prior to OC
resolution, then both gates are quickly pulled to 0V turning
off both N-Channel MOSFETs simultaneously.
Upon any UV condition, the PGOOD signal will pull low
when tied high through a resistor to the logic supply. This pin
is a fault indicator but not the OC latch-off indicator. For an
OC latch-off indication, monitor CTIM, pin 10. This pin will
rise rapidly to 12V once the time-out period expires. See
“Simplified Schematic” on page 2 for OC latch-off circuit
suggestion.
The ISL6161 is reset by a rising edge on the ENABLE
pin
and is turned on by the ENABLE
pin being driven low.
ISL6161 Application Considerations
In a non PCI-Express, motor drive application, Current loop
stabilization is facilitated through a small value resistor in
series with the gate timing capacitor. As the ISL6161 drives
a highly inductive current load, instability characterized by
the gate voltage repeatedly ramping up and down may
appear. A simple method to enhance stability is provided by
the substitution of a larger value gate resistor. Typically, this
situation can be avoided by eliminating long point-to-point
wiring to the load.
With the ENABLE internal pull-up, the ISL6161 is well suited
for implementation on either side of the connector where a
motherboard prebiased condition or a load board staggered
connection is present. In either case, the ISL6161 turns on in
a soft-start mode protecting the supply rail from sudden
current loading.
During the Time-Out delay period with the ISL6161 in
current limit mode, the V
GS
of the external N-Channel
MOSFETs is reduced driving the N-Channel MOSFET switch
into a high r
DS(ON)
state. Thus, avoid extended time-out
periods as the external N-Channel MOSFETs may be
damaged or destroyed due to excessive internal power
dissipation. Refer to the MOSFET manufacturers data sheet
for SOA information.
With the high levels of in-rush current e.g., highly capacitive
loads and motor start-up currents, choosing the current
regulation (CR) level is crucial to provide both protection
and still allow for this in-rush current without latching off.
Consider this in addition to the time-out delay when
choosing MOSFETs for your design.
Physical layout of R
SENSE
resistors is critical to avoid
inadvertently lowering the CR and trip levels. Ideally, trace
routing between the R
SENSE
resistors and the ISL6161
should be as direct and as short as possible with zero
current in the sense lines.
TABLE 1. R
SENSE
AND R
ILIM
RECOMMENDATIONS
PCI-EXPRESS
ADD-IN CARD
CONNECTOR
R
ILIM
(k
3.3V R
SENSE
(m
NOMINAL
CR (A)
12V R
SENSE
(m
NOMINAL
CR (A)
NOMINAL
CRVth
(mV)
X1 10 30, 3.3 150, 0.7 100
4.99 15, 3.5 90, 0.6 53
X4/X8 10 30, 3.3 40, 2.5 100
4.99 15, 3.5 20, 2.6 53
X16 10 30, 3.3 16, 6.3 100
4.99 15, 3.5 8, 6.6 53
NOTE: Nominal CR Vth = R
ILIM
x 10µA.
TABLE 2.
C
TIM
CAPACITOR
(µF)
NOMINAL TIME-OUT PERIOD
(ms)
0.022 4.4
0.047 9.4
0.1 20
NOTE: Nominal time-out period in seconds = C
TIM
x 200k
CORRECT
TO ISEN AND
CURRENT
SENSE RESISTOR
INCORRECT
FIGURE 1. SENSE RESISTOR PCB LAYOUT
R
ISET
ISL6161

ISL6161IBZA-T

Mfr. #:
Manufacturer:
Renesas / Intersil
Description:
Hot Swap Voltage Controllers W/ANNEAL PWR DIST CONTROLLER
Lifecycle:
New from this manufacturer.
Delivery:
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