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FJY4008R Rev. B
FJY4008R PNP Epitaxial Silicon Transistor
July 2007
FJY4008R
PNP Epitaxial Silicon Transistor
Features
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
1
=47KΩ, R
2
=22KΩ)
• Complement to FJY3008R
Absolute Maximum Ratings * T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics* T
a
=25°C unless otherwise noted
* Minimum land pad size.
Electrical Characteristics* T
C
= 25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -50 V
V
CEO
Collector-Emitter Voltage -50 V
V
EBO
Emitter-Base Voltage -10 V
I
C
Collector Current -100 mA
T
STG
Storage Temperature Range -55~150 °C
T
J
Junction Temperature 150 °C
P
C
Collector Power Dissipation, by R
θJA
200 mW
Symbol Parameter Max Units
R
θJA
Thermal Resistance, Junction to Ambient 600 °C/W
Symbol Parameter Test Condition MIN Typ MAX Units
V(BR)CBO Collector-Base Breakdown Voltage IC = -10 uA, IE = 0 -50 V
V(BR)CEO Collector-Emitter Breakdown Voltage IC = -100 uA, IB = 0 -50 V
ICBO Collector-Cutoff Current VCB = -40 V, IE = 0 -0.1 uA
hFE DC Current Gain VCE = -5 V, IC = -5mA 68
VCE(sat) Collector-Emitter Saturation Voltage IC = -10 mA, IB = -0.5 mA -0.3 V
fT Current Gain - Bandwidth Product VCE = -10V, IC = -5 mA 200 MHz
Ccb Output Capacitance VCB = -10 V, IE = 0, f = 1.0 MHz 5.5 pF
VI(off) Input Off Voltage VCE = -5 V, IC = -100uA -0.4 V
VI(on) Input On Voltage VCE = -0.3V, IC = -2mA -2.5 V
R1 Input Resistor 15 22 29 KΩ
R1/R2 Resistor Ratio 0.42 0.47 0.52
SOT - 523F
E
B
C
Equivalent Circuit
BE
C
S58
