IRG4RC20FTR

P1-P3 P4-P6 P7-P9

IRG4RC20F

4 www.irf.com

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

Fig. 4 - Maximum Collector Current vs. Case

Temperature

-60 -40 -20 0 20 40 60 80 100 120 140 160

1.0

2.0

3.0

T , Junction Temperature ( C)

V , Collector-to-Emitter Voltage(V)

J

°

CE

V = 15V

80 us PULSE WIDTH

GE

I = A4.5

C

I = A9

C

I = A18

C

25 50 75 100 125 150

0

5

10

15

20

25

T , Case Temperature ( C)

Maximum DC Collector Current(A)

C

°

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRG4RC20F

www.irf.com 5

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

0 10 20 30 40 50

0.66

0.67

0.68

0.70

0.71

0.72

R , Gate Resistance (Ohm)

Total Switching Losses (mJ)

G

V = 480V

V = 15V

T = 25 C

I = 9.0A

CC

GE

J

C

°

1 10 100

0

200

400

600

800

1000

V , Collector-to-Emitter Voltage (V)

C, Capacitance (pF)

CE

V

C

C

C

=

=

=

=

0V,

C

C

C

f = 1MHz

+ C

+ C

C SHORTED

GE

ies

g

e

g

c , ce

res

g

c

oes ce

g

c

C

ies

C

oes

C

res

0 5 10 15 20 25 30

0

5

10

15

20

Q , Total Gate Charge (nC)

V , Gate-to-Emitter Voltage (V)

G

GE

V = 400V

I = 12A

CC

C

( Ω )

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.1

1

10

T , Junction Temperature ( C )

Total Switching Losses (mJ)

J

°

R = 50Ohm

V = 15V

V = 480V

G

GE

CC

I = A

24

C

I = A

12

C

I = A

6

C

50Ω

IRG4RC20F

6 www.irf.com

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

Fig. 12 - Turn-Off SOA

480V

4

X I

C

@25°C

D.U.T.

50V

L

V *

C





* Driver same t

y

p

e as D.U.T.; Vc = 80% of Vce

(

max

)

* Note: Due to the 50V

p

ower su

p

p

l

y

,

p

ulse width and inductor

will increase to obtain rated Id.

1000V

Fig. 13a - Clamped Inductive

Load Test Circuit

Fig. 13b - Pulsed Collector

Current Test Circuit

480µF

960V

0 - 480V

R

L

=

50V

Driver*

1000V

D.U.T.

I

C

C

V







L

Fig. 14a - Switching Loss

Test Circuit

* Driver same type

as D.U.T., VC = 480V

1

10

100

1 10 100 1000

V = 20V

T = 125 C

GE

J

o

SAFE OPERATING AREA

V , Collector-to-Emitter Voltage (V)

I , Collector Current (A)

CE

C

5 10 15 20 25

0.0

1.0

2.0

3.0

4.0

5.0

I , Collector Current (A)

Total Switching Losses (mJ)

C

R = 50Ohm

T = 150 C

V = 480V

V = 15V

G

J

CC

GE

°

50 Ω

P1-P3 P4-P6 P7-P9

IRG4RC20FTR

Mfr. #:

Buy IRG4RC20FTR

Manufacturer:

Infineon Technologies

Description:

IGBT 600V 22A 66W DPAK

Lifecycle:

New from this manufacturer.

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