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IXFR32N80P
P1-P3
P4-P5
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR 32N80P
F
ig
. 11. Cap
acit
an
ce
10
100
1000
10000
100000
0
5
10
15
20
25
30
35
40
V
D S
- V
ol
ts
Capac
itanc
e -
pic
oF
ar
ads
C
is
s
C
os
s
C
rs
f =
1
M
H
z
F
ig
. 10. Gat
e
C
h
ar
g
e
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
140
160
Q
G
-
nanoC
oulom
bs
V
G S
- V
o
l
ts
V
DS
= 400V
I
D
= 16
A
I
G
= 10
m
A
F
i
g.
7
.
I
nput Adm
i
tta
nc
e
0
5
10
15
20
25
30
35
40
45
33
.
5
44
.
5
5
V
G S
- V
ol
t
s
I
D
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m
p
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re
s
T
J
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25
º
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º
C
F
i
g.
8
.
Tr
a
ns
c
onduc
tanc
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0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
35
40
45
I
D
-
A
m
per
es
g
f s
-
Siem
ens
T
J
= -40
º
C
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C
F
ig
. 9. So
u
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C
u
r
r
e
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t
vs
.
S
our
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e
-To-D
r
a
in Vol
ta
ge
0
10
20
30
40
50
60
70
80
90
100
0
.3
0.4
0
.5
0
.6
0.7
0
.8
0
.9
1
1
.1
1.2
V
S D
- V
ol
t
s
I
S
- A
m
p
e
re
s
T
J
= 1
25
º
C
T
J
= 25
º
C
F
ig
. 12. M
axim
u
m
T
r
an
s
ie
n
t
T
h
e
r
m
al
R
esi
st
a
n
c
e
0.
01
0.
10
1.
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1
10
100
1000
P
ul
s
e Wi
dth -
m
i
l
l
ise
c
onds
R
( t
h
) J C
-
º
C / W
© 2006 IXYS All rights reserved
IXFR 32N80P
F
ig. 13. M
axim
u
m
T
r
an
s
ie
n
t
T
h
e
r
m
al R
e
s
is
t
an
ce
0.
001
0.
010
0.
100
1.
000
0.
00001
0.
0001
0.
001
0.
01
0.
1
1
10
P
ul
s
e Wi
dt
h -
Sec
onds
R
( t
h
) J
C
-
º
C / W
P1-P3
P4-P5
IXFR32N80P
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