APT50DF170HJ
APT50DF170HJ – Rev 1 October 2012
www.microsemi.com
2-4
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
T
j
= 25°C 1.8 2.2
V
F
Diode Forward Voltage I
F
= 50A
T
j
= 125°C 1.9
V
T
j
= 25°C 250
I
RM
Maximum Reverse Leakage Current V
R
= 1700V
T
j
= 125°C 500
µA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
T
j
= 25°C 385
t
rr
Reverse Recovery Time
T
j
= 125°C 420
ns
T
j
= 25°C 14
Q
rr
Reverse Recovery Charge
T
j
= 125°C 23
µC
T
j
= 25°C 6
E
rr
Reverse Recovery Energy
I
F
= 50A
V
R
= 900V
di/dt = 800A/µs
T
j
= 125°C 12
mJ
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
R
thJC
Junction to Case Thermal resistance 0.7
R
thJA
Junction to Ambient 20
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
2500 V
T
J
,T
STG
Storage Temperature Range -55 150
T
L
Max Lead Temp for Soldering:0.063” from case for 10 sec 300
°C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m
Wt Package Weight 29.2
g
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
3.30 (.130)
4.57 (.180)
