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DMJT9435-13

P1-P3P4-P4
DMJT9435
Document number: DS31622 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated
DMJT9435
NEW PRODUCT
LOW V
CE(SAT)
PNP SURFACE MOUNT TRANSISTOR
Features
• Ideally Suited for Automated Assembly Processes
• Low Collector-Emitter Saturation Voltage
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.115 grams (approximate)
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-45 V
Collector-Emitter Voltage
V
CEO
-30 V
Emitter-Base Voltage
V
EBO
-6 V
Peak Pulse Current
I
CM
-5 A
Continuous Collector Current
I
C
-3 A
Continuous Base Current
I
B
-1 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ T
A
= 25°C P
D
1.2 W
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
A
= 25°C
R
θ
JA
104 °C/W
Power Dissipation (Note 4) @ T
A
= 25°C P
D
2 W
Thermal Resistance, Junction to Ambient Air (Note 4) @ T
A
= 25°C
R
θ
JA
62.5 °C/W
Power Dissipation @ T
C
= 25°C P
D
3 W
Thermal Resistance, Junction to Case @ T
C
= 25°C
R
θ
JA
42 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch
2
copper pad layout.
Top View
Device Schematic
Pin Out Configuration
3
1
2,4
C
O
L
L
E
C
T
O
R
E
M
I
T
T
E
R
B
A
S
E
4
3
2
1
C
C
B
E
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DMJT9435
Document number: DS31622 Rev. 2 - 2
2 of 4
www.diodes.com
December 2008
© Diodes Incorporated
DMJT9435
NEW PRODUCT
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 5)
V
(
BR
)
CEO
-30
⎯ ⎯
V
I
C
= -10mA
Emitter-Base Breakdown Voltage
V
(
BR
)
EBO
-6
⎯ ⎯
V
I
E
= -50μA
Collector-Base Cutoff Current
I
CER
⎯ ⎯
-20
μA
V
CB
= -25V, R
BE
= 200Ω
⎯ ⎯
-200
μA
V
CB
= -25V, R
BE
= 200Ω,
T
A
= 125°C
Emitter-Base Cutoff Current
I
EBO
⎯ ⎯
-10
μA
V
EB
= -5V, I
C
= 0
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
125
⎯ ⎯
⎯
V
CE
= -1V, I
C
= -0.8A
110
⎯ ⎯ V
CE
= -1V, I
C
= -1.2A
90
⎯ ⎯ V
CE
= -1V, I
C
= -3A
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
-100 -210
mV
I
C
= -0.8A, I
B
= -20mA
⎯ ⎯
-275
I
C
= -1.2A, I
B
= -20mA
⎯
-250 -550
I
C
= -3A, I
B
= -300mA
Equivalent On-Resistance
R
CE
(
SAT
)
⎯
83 183
mΩ
I
C
= -3.0A, I
B
= -300mA
Base-Emitter Saturation Voltage
V
BE
(
SAT
)
⎯ ⎯
-1.25 V
I
C
= -3A, I
B
= -300mA
Base-Emitter Turn-on Voltage
V
BE
(
ON
)
⎯ ⎯
-1.1 V
V
CE
= -4V, I
C
= -1.2A
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
f
T
⎯
160
⎯
MHz
V
CE
= -10V, I
C
= -100mA,
f = 100MHz
Output Capacitance
C
obo
⎯
45 150 pF
V
CB
= -10V, f = 1MHz
Input Capacitance
C
ibo
⎯
140
⎯
pF
V
EB
= -8V, f = 1MHz
SWITCHING CHARACTERISTICS
Turn-On Time
t
on
⎯
200
⎯
ns
V
CC
= -15V, I
C
= -1.2A,
I
B1
= -20mA
Delay Time
t
d
⎯
90
⎯
ns
Rise Time
t
r
⎯
110
⎯
ns
Turn-Off Time
t
off
⎯
155
⎯
ns
V
CC
= -15V, I
C
= -1.2A,
I
B1
= I
B2
= -20mA
Storage Time
t
s
⎯
100
⎯
ns
Fall Time
t
f
⎯
55
⎯
ns
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
0
P , POWER DISSIPATION (W)
D
T , AMBIENT TEMPERATURE ( C)
A
°
Note 3
Fig. 1 Power Dissipation vs. Ambient Temperature
0.4
0.8
1.2
1.6
2.0
25 50 75 100 125 150
Note 4
-I , COLLECTOR CURRENT (A)
C
0
0.2
0.4
0.6
0.8
1.0
048121620
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
I = -1mA
B
I = -2mA
B
I = -3mA
B
I = -4mA
B
I = -5mA
B
DMJT9435
Document number: DS31622 Rev. 2 - 2
3 of 4
www.diodes.com
December 2008
© Diodes Incorporated
DMJT9435
NEW PRODUCT
10
100
1,000
1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 3 Typical DC Current Gain vs. Collector Current
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = -1V
CE
0.001
0.01
0.1
1
10
1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-V ,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION
CE(SAT)
VOLTAGE (V)
I/I = 10
CB
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
1.2
-V , BASE-EMI
T
T
E
R
T
U
R
N-
O
N V
O
L
T
A
G
E (V)
BE(ON)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = -4V
CE
1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0.2
0.4
0.6
0.8
1.0
1.2
-V , BASE-EMI
T
T
E
R
SA
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E (V)
BE(SAT)
0
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
I = 10
CB
/I
0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 7 Typical Capacitance Characteristics
1
10
100
1,000
C
A
P
A
C
I
T
AN
C
E (pF)
C
ibo
C
obo
f = 1MHz
0102030405060708090100
-I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Gain-Bandwidth Product
vs. Collector Current
1
10
100
1,000
f,
G
AIN-BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V = -10V
f = 100MHz
CE
P1-P3P4-P4

DMJT9435-13

Mfr. #:
Buy DMJT9435-13
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT LOW VSAT PNP SMT
Lifecycle:
New from this manufacturer.
Delivery:
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