VSB20L45
www.vishay.com
Vishay General Semiconductor
Revision: 23-Oct-13
1
Document Number: 89480
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Photovoltaic Solar Cell Protection Schottky Rectifier
Ultra Low V
F
= 0.26 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• High forward surge capability
• ESD capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
•T
J
200 °C max. in solar by-pass mode application
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: P600
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
Notes
(1)
With heatsink
(2)
Without heatsink, free air
(3)
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
PRIMARY CHARACTERISTICS
I
F(DC)
20 A
V
RRM
45 V
I
FSM
250 A
V
F
at I
F
= 20 A 0.40 V
T
OP
max. (AC mode) 150 °C
T
J
max. (DC forward current) 200 °C
Package P600
Diode variation Single die
P600
TMBS
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VSB20L45 UNIT
Device marking code V20L45
Maximum repetitive peak reverse voltage V
RRM
45 V
Maximum average forward rectified current (fig. 1)
I
F(AV)
(1)
20
A
I
F(AV)
(2)
7.5
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I
FSM
250
Operating junction temperature range (AC mode) T
OP
-40 to +150
°C
Storage temperature range T
STG
-40 to +175
Junction temperature in DC forward current
without reverse bias, t d 1 h
T
J
(3)
d 200