NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
* 100 Volt V
CEO
* 800 mA continuous current
* Gain of 10K at I
C
=500mA
*P
tot
=1 Watt
REFER TO BCX38 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
120 V
Collector-Emitter Voltage V
CEO
100 V
Emitter-Base Voltage V
EBO
10 V
Continuous Collector Current I
C
800 mA
Power Dissipation at T
amb
=25°C
derate above 25°C
P
tot
1.0
5.7
W
mW/ °C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
120 V
I
C
=10µA, I
E
=0
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
100 V I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10 V
I
E
=10µA, I
C
=0
Collector Cut-Off
Current
I
CBO
100 nA V
CB
=60V, I
E
=0
Emitter Cut-Off Current I
EBO
100 nA V
EB
=8V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
1.25 V I
C
=800mA, I
B
=8mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.8 V IC=800mA, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
5000
10000
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
*Measured under pulsed conditions. Pulse Width=300
µs. Duty cycle ≤2%
E-line
TO92 Compatible
ZTX614
3-215
C
B
E
