AMMP-6522-BLKG Datasheet AMMP-6522-BLKG, AMMP-6522-TR2G, AMMP-6522-TR1G | P1-P3

AMMP-6522

7 to 20 GHz GaAs MMIC LNA/IRM Receiver

in SMT Package

Data Sheet

Features

•

5x5 mm Surface Mount Package

• Integrated Low Noise Amplier

• Integrated Image Reject Mixer

• 50 Ω Input and Output Match

• Single Supply Bias Pin

Specications Vd = 4.0 V (75 mA), Vg = -1.0 V (0.1 mA)

• RF frequency: 7 to 20 GHz

• IF frequency: DC to 3.5 GHz

• Conversion Gain (RF/IF): 13 dB

• Input Intercept Point: -4 dBm

• Image Suppression: 15 dB

• Total Noise Figure: 2.4 dB

Application

• Microwave radio systems

• Satellite VSAT, DBS Up/Down Link

• LMDS & Pt-Pt mmW Long Haul

• Broadband Wireless Access (including 802.16 and

802.20 WiMax)

• WLL and MMDS loops

Functional Block Diagram

Description

Avago’s AMMP-6522 is an easy-to-use broadband inte-

grated receiver in a surface mount package. The MMIC

includes a 3-stage LNA to provide gain amplification

and a gate-pumped image-reject mixer for frequency

translation. The overall receiver performs Single Side

Band down-conversion in the 7 to 20 GHz RF signal

range. The LO and RF are matched to 50 Ω. The IF

output is provided in 2-port format where an external

90-degree hybrid can be utilized for full image rejection.

The LNA requires a 4 V, 75 mA power supply, where the

mixer bias is a simple -1 V, 0.1 mA. The MMIC is fabricated

using PHEMT technology. The surface mount package

allows elimination of “chip & wire” assembly for lower

cost. This MMIC is a cost effective alternative to multi-

chip solution that have higher loss and complex assem-

bly.

Package Diagram

Attention: Observe precautions for

handling electrostatic sensitive devices.

ESD Machine Model (Class A) :40V

ESD Human Body Model (Class 1A) :150V

Refer to Avago Technologies Application Note A004R:

Electrostatic Discharge, Damage and Control.

Note: MSL Rating = Level 2A

FUNCTION

IF1

IF2

7 6 5

1 2 3

TOP VIEW

PACKAGE BASE: GND

IF1 NC IF2

Vd NC Vg

1 2 3

7 56

Electrical Specications

1. Small/Large -signal data measured in a fully de-embedded test xture form TA = 25°C.

2. Pre-assembly into package performance veried 100% on-wafer per AMMC-6522 published specications.

3. This nal package part performance is veried by a functional test correlated to actual performance at one or more

frequencies.

4. Specications are derived from measurements in a 50 Ω test environment. Aspects of the amplier performance

may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise

(Гopt) matching.

5. NF is measure on-wafer. Additional bond wires (-0.2nH) at Input could improve NF at some frequencies.

Table 1. RF Electrical Characteristics

TA=25°C, Vd=4.0V, Vg=-1V, Zo=50 Ω, LO=+15dBm, IF=2GHz

[1]

Parameter

RF=8GHz, LO=10GHz RF=18GHz, LO=20GHz

Unit CommentMin Typ Max Min Typ Max

Noise Figure into 50 Ω, NF 2.6 3.3 3 3.3 dB

Conversion Gain, CG 12 13 12 14 dB

Input Third Order Intercept, IIP3 -8 -6 -5 -0.4 dBm

Image Rejection, Sup 15 29 15 30 dB

Note:

1. All tested parameters are guaranteed with the following measurement accuracy:

RF=8GHz: ±0.6dB for Conversion Gain, ±10dB for IRR, ±0.5dB for NF, ±0.8dBm for IIP3

RF=18GHz: ±1.8dB for Conversion Gain, ±1.6dB for IRR, ±0.6dB for NF, ±1.7dBm for IIP3

Table 2. Recommended Operating Range

1. Ambient operational temperature TA = 25°C unless otherwise noted.

2. Channel-to-backside Thermal Resistance (Tchannel (Tch) = 34°C) as measured using infrared microscopy. Thermal

Resistance at backside temperature (Tb) = 25°C calculated from measured data.

Description Min. Typical Max. Unit Comments

Drain Supply Current, Id 75 95 mA Vd = 4.0 V

Drain Supply Voltage, Vd 3 4 5 V

Gate Supply Voltage, Vg -1.2 -1.0 -0.8 V Ig = 0.1mA

RF Frequency, RFfreq 7 20 GHz

LO Frequency, LOfreq 5 22 GHz

IF Frequency, IFfreq

[1]

DC 3.5 GHz

LO Drive Power, LO +10 +15 +22 dBm

Note:

1. Use IF = DC with caution. Please see “Biasing and Operation” for more details.

Table 3. Thermal Properties

Parameter Test Conditions Value

Thermal Resistance,

qjc

Ambient operational temperature TA = 25°C

Channel-to-backside Thermal Resistance Tchannel(Tch)=34°C

Thermal Resistance at backside temperature Tb=25°C

qjc = 27 °C/W

Absolute Minimum and Maximum Ratings

Table 4. Minimum and Maximum Ratings

Description Pin Min. Max. Unit Comments

Drain to Ground Supply Voltage, Vd 5.5 V

Gate to Ground Voltage, Vg +0.8 V

Drain Current , Id 100 mA

Gate Current, Ig 1 mA

RF CW Input Power, Pin 10 dBm CW

Channel Temperature, Tch +150 °C

Storage Temperature, Tstg -65 +150 °C

Maximum Assembly Temperature, Tmax 260 °C 20 second maximum

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to this device.

P1-P3 P4-P6 P7-P7

AMMP-6522-BLKG

Mfr. #:

Buy AMMP-6522-BLKG

Manufacturer:

Broadcom / Avago

Description:

RF Amplifier LNA IR Mixer 6-22GHz

Lifecycle:

New from this manufacturer.

Delivery:

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AMMP-6522-BLKG

AMMP-6522-BLKG

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