HERA801G - HERA808G
CREAT BY ART
- Glass passivated chip junction
- High efficiency, Low VF
- High current capability
- High reliability
- High surge current capability
- Halogen-free according to IEC 61249-2-21
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
50 100 200 300 400 600 800 1000 V
V
RMS
35 70 140 210 280 420 560 700 V
V
DC
50 100 200 300 400 600 800 1000 V
I
F(AV)
A
t
rr
ns
C
J
pF
R
θJC
°C/W
T
J
°C
T
STG
°C
Version: I1511
Taiwan Semiconductor
8A, 50V - 1000V Glass Passivated Hi
h Efficient Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
400
Mounting torque: 0.56 Nm max.
Case: TO-220AC
Polarity: As marked
Weight: 1.8 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
HERA
806G
HERA
807G
HERA
808G
Maximum repetitive peak reverse voltage
Maximum RMS voltage
HERA
802G
HERA
803G
HERA
804G
HERA
805G
V1.0 1.3 1.7
Maximum DC blocking voltage
Maximum average forward rectified current 8
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
150
50 80
Typical junction capacitance (Note 3)
Maximum reverse current @ rated V
R
T
J
=25°C
I
R
T
J
=125°C
10
65 55
TO-220AC
UNITSYMBOLPARAMETER
HERA
801G
Maximum reverse recovery time (Note 2)
μA
A
Maximum instantaneous forward voltage (Note 1)
I
F
=8 A
V
F
Typical thermal resistance 2
Operating junction temperature range
- 55 to +150
- 55 to +150
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0V DC.
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
1
2
C
