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Jantx2N6193

P1-P2
TECHNICAL DATA
PNP MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/561
Devices Qualified Level
2N6193
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N6193 Units
Collector-Emitter Voltage
V
CEO
100 Vdc
Collector-Base Voltage
V
CBO
100 Vdc
Emitter-Base Voltage
V
EBO
6.0 Vdc
Collector Current
I
C
5.0 Adc
Base Current
I
B
1.0 Adc
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
1.0
10
W
W
Operating & Storage Temperature Range
T
op
,
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC
17.5
0
C/W
1) Derate linearly 5.71mW/
0
C for T
A
> +25
0
C
2) Derate linearly 57.1mW/
0
C for T
C
> +25
0
C
TO-39*
(TO-205AD)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
I
C
= 50 mAdc
V
CEO(sus)
100 Vdc
Collector-Emitter Cutoff Current
V
CE
= 100 Vdc
I
CEO
100
µAdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
I
EBO
100
µAdc
Collector-Emitter Cutoff Current
V
CE
= 90 Vdc, V
BE
= 1.5 Vdc
I
CEX
10
µAdc
Collector-Base Cutoff Current
V
CB
= 100 Vdc
I
CBO
10
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6193 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
(3)
DC Current Gain
I
C
= 0.5 Adc, V
CE
= 2.0 Vdc
I
C
= 2.0 Adc, V
CE
= 2.0 Vdc
I
C
= 5.0 Adc, V
CE
= 2.0 Vdc
h
FE
60
60
40
240
Collector-Emitter Saturation Voltage
I
C
= 2.0 Adc, I
B
= 0.2 Adc
I
C
= 5.0 Adc, I
B
= 0.5 Adc
V
CE(sat)
0.7
1.2
Vdc
Base-Emitter Saturation Voltage
I
C
= 2.0 Adc, I
B
= 0.2 Adc
I
C
= 5.0 Adc, I
B
= 0.5 Adc
V
BE(sat)
1.2
1.8
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward-Current Transfer Ratio
I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 10 MHz
h
fe
3.0 15
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz ≤ f ≤ 1.0 MHz
C
obo
300 pF
Output Capacitance
V
BE
= 2.0 Vdc, I
C
= 0, 100 kHz ≤ f ≤ 1.0 MHz
C
ibo
1250 pF
SWITCHING CHARACTERISTICS
Delay Time
V
CC
= -40 Vdc, V
BE(off)
= 3.0 Vdc
t
d
100
ηs
Rise Time
I
C
= 2.0 Adc, I
B1
= 0.2 Adc
t
r
100
ηs
Storage Time
V
CC
= -40 Vdc I
C
= 2.0 Adc,
t
s
2.0
µs
Fall Time
I
B1
= -I
B2
= 0.2 Adc
t
f
200
ηs
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t ≥ 0.5 s
Test 1
V
CE
= 2.0 Vdc, I
C
= 5.0 Adc
Test 2
V
CE
= 90 Vdc, I
C
= 55 mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
12010
1
Page 2 of 2
P1-P2

Jantx2N6193

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Bipolar Transistors - BJT Power BJT
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