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IRFH7107TRPBF

P1-P3P4-P6P7-P9
HEXFET
®
Power MOSFET
Notes through are on page 9
Features and Benefits
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
PQFN 5X6 mm
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
A
= 25°C
Power Dissipation
P
D
@ T
C(Bottom)
= 25°C
Power Dissipation
Linear Derating Factor
W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
V
W
A
°C
Max.
14
47
300
± 20
75
11
75
-55 to + 150
3.6
0.029
104
V
DS
75 V
R
DS(on) max
(@V
GS
= 10V)
8.5
m
Ω
Q
g (typical)
48
nC
R
G (typical)
0.6
Ω
I
D
(@T
c(Bottom)
= 25°C)
75 A
Features Benefits
Low RDSon (< 8.5m
Ω
) Lower Conduction Losses
Low Thermal Resistance to PCB (< 1.2°C/W) Enables better thermal dissipation
Low Profile (<0.9 mm) results in Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Industrial Qualification Increased Reliability
IRFH7107PbF
1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015
Note
Form Quantity
IRFH7107TRPBF PQFN 5mm x 6mm Tape and Reel 4000
IRFH7107TR2PBF
PQFN 5mm x 6mm Tape and Reel 400 EOL notice #259
Orderable part number Package Type Standard Pack
IRFH7107PbF
2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015
S
D
G
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
(Bottom)
Junction-to-Case
––– 1.2
R
θJC
(Top)
Junction-to-Case
––– 30
°C/W
R
θ
JA
Junction-to-Ambient
––– 35
R
θJA
(<10s)
Junction-to-Ambient
––– 22
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 75 ––– ––– V
ΔΒ
V
DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 6.9 8.5
m
Ω
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
Δ
V
GS(th)
Gate Threshold Voltage Coefficient ––– -8.7 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 68 ––– ––– S
Q
g
Total Gate Charge ––– 48 72
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 10 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 4.0 –––
Q
gd
Gate-to-Drain Charge ––– 15 –––
Q
godr
Gate Charge Overdrive ––– 19 –––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 19 –––
Q
oss
Output Charge ––– 19 ––– nC
R
G
Gate Resistance ––– 0.6
–––
Ω
t
d(on)
Turn-On Delay Time ––– 9.1 –––
t
r
Rise Time ––– 12 –––
t
d(off)
Turn-Off Delay Time ––– 20 –––
t
f
Fall Time ––– 6.5 –––
C
iss
Input Capacitance ––– 3110 –––
C
oss
Output Capacitance ––– 365 –––
C
rss
Reverse Transfer Capacitance ––– 165 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 28 42 ns
Q
rr
Reverse Recovery Charge ––– 160 240 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
V
DS
= V
GS
, I
D
= 100μA
V
GS
= 10V
Typ.
V
DS
= 75V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V
V
DD
= 38V, V
GS
= 10V
–––
R
G
=1.8
Ω
V
DS
= 25V, I
D
= 45A
V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
μA
I
D
= 45A
I
D
= 45A
V
GS
= 0V
V
DS
= 25V
T
J
= 25°C, I
F
= 45A, V
DD
= 38V
di/dt = 500A/μs
T
J
= 25°C, I
S
= 45A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Conditions
Max.
106
45
ƒ = 1.0MHz
Conditions
V
GS
= 0V, I
D
= 250uA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 45A
––– ––– 300
––– ––– 75
MOSFET symbol
nA
ns
A
pF
nC
V
DS
= 38V
–––
V
GS
= 20V
V
GS
= -20V
IRFH7107PbF
3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
7.0V
5.5V
4.8V
4.5V
4.3V
BOTTOM 4.0V
≤
60μs PULSE WIDTH
Tj = 25°C
4.0V
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.0V
≤
60μs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
10V
7.0V
5.5V
4.8V
4.5V
4.3V
BOTTOM 4.0V
2 3 4 5 6 7 8
V
GS
, Gate-to-Source Voltage (V)
1.0
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 25V
≤
60μs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 45A
V
GS
= 10V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 10203040506070
Q
G
,
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 60V
V
DS
= 38V
VDS= 15V
I
D
= 45A
P1-P3P4-P6P7-P9

IRFH7107TRPBF

Mfr. #:
Buy IRFH7107TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET 75V 75A 8.5mOhm 48nC Qg
Lifecycle:
New from this manufacturer.
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