IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT258S-800LT
SCR logic level, high temperature
12 October 2016 Product data sheet
1. General description
Passivated sensitive gate Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface
mountable plastic package intended for use in applications requiring high bidirectional blocking
voltage capability and high thermal cycling performance. These devices are intended to be
interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger
circuits.
2. Features and benefits
Direct interfacing with low power drivers and microcontrollers
High bidirectional blocking voltage capability
High junction operating temperature capability
High thermal cycling performance
Planar passivated for voltage ruggedness and reliability
Surface mountable package
Very sensitive gate for logic level controls
3. Applications
General purpose switching and phase control
Ignition circuits, CDI for 2- and 3-wheelers
Motor control - e.g. small kitchen appliances
Protection circuits for Switched-Mode Power Supplies (SMPS)
Protection circuits in lighting ballasts
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 800 V
V
RRM
repetitive peak reverse
voltage
- - 800 V
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms; Fig. 4; Fig. 5
- - 75 AI
TSM
non-repetitive peak on-
state current
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
- - 82 A
T
j
junction temperature [1] - - 150 °C
I
T(AV)
average on-state
current
half sine wave; T
mb
≤ 135 °C; Fig. 1 - - 5 A
WeEn Semiconductors
BT258S-800LT
SCR logic level, high temperature
BT258S-800LT All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 12 October 2016 2 / 12
Symbol Parameter Conditions Min Typ Max Unit
I
T(RMS)
RMS on-state current half sine wave; T
mb
≤ 135 °C; Fig. 2;
Fig. 3
- - 8 A
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C; Fig. 8 20 - 50 µA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 150 °C; R
GK
= 100 Ω;
(V
DM
= 67% of V
DRM
); exponential
waveform; Fig. 13
35 70 - V/µs
[1] Operation above junction temperatures of 110 °C may require the use of a gate to cathode resistor of 1 kΩ or less.
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
2 A anode
3 G gate
mb A mounting base; connected to
anode
3
2
mb
1
DPAK (SOT428)
sym037
A K
G
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT258S-800LT DPAK plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
SOT428

BT258S-800LT,118

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
SCRs Thyristor SCR 800V 82A 3-Pin (2+Tab)
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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