DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M
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Vishay General Semiconductor
Revision: 16-Aug-13
1
Document Number: 88571
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Miniature Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Applicable for automative insertion
• High surge current capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: DFM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
PRIMARY CHARACTERISTICS
Package DFM
I
F(AV)
1 A
V
RRM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
I
FSM
50 A
I
R
5 μA
V
F
at I
F
= 1.0 A 1.1 V
T
J
max. 150 °C
Diode variations Quad
~
~
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT
Device marking code DF005 DF01 DF02 DF04 DF06 DF08 DF10
Maximum repetitive peak reverse voltage V
RRM
50 100 200 400 600 800 1000 V
Maximum RMS voltage V
RMS
35 70 140 280 420 560 700 V
Maximum DC blocking voltage V
DC
50 100 200 400 600 800 1000 V
Maximum average forward output rectified current
at T
A
= 40 °C
I
F(AV)
1.0 A
Peak forward surge current single sine-wave
superimposed on rated load
I
FSM
50 A
Rating for fusing (t < 8.3 ms) I
2
t10A
2
s
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT
Maximum instantaneous
forward voltage drop per diode
1.0 A V
F
1.1 V
Maximum reverse current at
rated DC blocking voltage per
diode
T
A
= 25 °C
I
R
5.0
μA
T
A
= 125 °C 500
Typical junction capacitance
per diode
4.0 V, 1 MHz C
J
25 pF
