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MIXA81H1200EH
P1-P3
P4-P6
© 2011 IXYS All rights reser
ved
4 - 6
20110518a
MIXA81H1200EH
IXYS reserves the right to change limits, test conditions and dimensions.
Part number
M
= Module
I
= IGBT
X
= XPT
A
= standard
81
= Current Rating [A]
H
= H~ Bridge
1200
= Re
v
erse
V
oltage [V]
EH
= E3-P
ack
Ordering
Part Name
Marking on Product
Delivering Mode
Base Qty
Ordering Code
Standard
MIXA 81 H 1200 EH
MIXA81H1200EH
Box
5
511053
Circuit Dia
gram
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
Product Marking
Remark:
Dimensions without tolerances acc. DIN ISO 2768-T1-m
XXX XX-XXX
XX
YYCWx
Part name
Date Code
Logo
Prod.Index
2D Data Matrix
FOSS-ID 6 digits
19
3
4
1
2
9
10
13, 21
15
14, 20
11
12
© 2011 IXYS All rights reser
ved
5 - 6
20110518a
MIXA81H1200EH
IXYS reserves the right to change limits, test conditions and dimensions.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
12
14
16
0.0
0.5
1.0
1.5
2.
0
2.5
3.0
3.5
4.0
4.5
0
20
40
60
80
100
120
140
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9 V
11 V
5
6
7
8
9
10
11
12
13
0
20
40
60
80
100
120
140
0
50
100
150
200
250
300
0
5
10
15
20
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
13 V
8
10
12
14
16
18
20
22
24
5
6
7
8
9
10
E
[mJ]
E
off
Fig. 1 Typ. output characteristi
cs
V
CE
[V]
I
C
[A]
V
GE
= 15 V
17 V
19 V
Fig. 2 Typ. output characteristi
cs
I
C
[A]
Fig. 3 Typ. tranfer characteristi
cs
V
GE
[V]
Fig. 4 Typ. turn-on gate
charge
Fig. 5 Typ. sw
itching en
ergy vs. coll
ector current
E
on
Fig. 6 Typ. sw
itchi
ng energy vs. gat
e resistance
R
G
[
Ω
]
E
[mJ]
I
C
[A]
E
on
E
off
I
C
= 75 A
V
CE
= 600 V
R
G
= 10
Ω
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
I
C
= 75 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
V
GE
= 15 V
T
VJ
= 125°C
T
ransistor
T1 -
T6
© 2011 IXYS All rights reser
ved
6 - 6
20110518a
MIXA81H1200EH
IXYS reserves the right to change limits, test conditions and dimensions.
1000
1200
1400
1600
1800
2000
2200
4
8
12
16
20
24
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
50
100
150
200
Q
rr
[µC]
I
F
[A]
V
F
[V]
di
F
/dt
[A/µs]
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
V
R
= 600 V
50 A
100 A
200 A
Fig. 7 Typ. Forw
ard current versus V
F
Fig. 8 Typ. reverse recov.ch
arge Q
rr
vs. di/dt
1000
1200
1400
1600
180
0
2000
2200
40
60
80
100
120
140
160
I
RM
[A]
di
F
/dt
[A/µs]
T
VJ
= 125°C
V
R
= 600 V
200 A
50 A
100 A
Fig. 9 Typ. peak reverse current I
RM
vs. di/dt
1000
1200
1400
1600
1800
2000
2200
0
100
200
300
400
500
600
700
t
rr
[ns]
di
F
/dt
[A/µs]
200 A
50 A
100 A
T
VJ
= 125°C
V
R
= 600 V
Fig. 10 Typ. recovery time
t
rr
versus di/dt
Fig. 11 Typ. recovery e
nergy E
rec
versus di/dt
1000
1200
1400
1600
180
0
2000
2200
0
2
4
6
8
E
rec
[mJ]
di
F
/dt
[A/µs]
T
VJ
= 125°C
V
R
= 600 V
200 A
50 A
100 A
0.001
0.01
0.1
1
10
0.01
0.1
1
t
p
[s]
Z
thJC
[K/W]
Fig. 12 Typ. transi
ent thermal impedance
IGBT
Diode
IGBT
FRD
R
i
t
i
R
i
t
i
1
0.072
0.002
0.092
0.002
2
0.037
0.03
0.067
0.03
3
0.156
0.03
0.155
0.03
4
0.055
0.08
0.086
0.08
In
verter D1 - D6
P1-P3
P4-P6
MIXA81H1200EH
Mfr. #:
Buy MIXA81H1200EH
Manufacturer:
Littelfuse
Description:
IGBT Modules IGBT Module H Bridge
Lifecycle:
New from this manufacturer.
Delivery:
DHL
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Ups
TNT
EMS
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