IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH130N10T
IXTQ130N10T
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5mm or less from the package body.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 60A, Note 1 55 93 S
C
iss
5080 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 635 pF
C
rss
95 pF
t
d(on)
30 ns
t
r
47 ns
t
d(off)
44 ns
t
f
28 ns
Q
g(on)
104 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 25A 30 nC
Q
gd
29 nC
R
thJC
0.42 °C/W
R
thCH
0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
T
J
= 25°C unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0V 130 A
I
SM
Repetitive, pulse width limited by T
JM
350 A
V
SD
I
F
= 25A, V
GS
= 0V, Note 1 1.0 V
t
rr
67 ns
I
RM
4.7 A
Q
rr
160 nC
I
F
= 25A, V
GS
= 0V
-di/dt = 100A/μs
V
R
= 50V
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 25A
R
G
= 5Ω (External)
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅ P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
e
∅ P
TO-247 (IXTH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
