DG2012E
www.vishay.com
Vishay Siliconix
S18-0425-Rev. B, 23-Apr-18
7
Document Number: 75834
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Switching Threshold vs. Supply Voltage
Charge Injection vs. Analog Voltage
Power Down Leakage Current vs. V
COM
Supply Current vs. Enable Input Voltage
Power Down Leakage Current vs. Temperature
10
100
1000
10000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
123456
Axis Title
1st line
2nd line
2nd line
V
IN
- Switching Threshold (V)
V+ - Supply Voltage (V)
2nd line
-40 °C to +85 °C
V
INH
V
INL
10
100
1000
10000
-50
-40
-30
-20
-10
0
10
20
30
0123456
Axis Title
1st line
2nd line
2nd line
Q
INJ
- Charge Injection (pC)
V
NO/NC
- Analog Voltage (V)
2nd line
V+ = 2 V
V+ = 5 V
V+ = 3 V
0
1
2
3
4
5
6
7
8
0246
I
COM(PD)
Power Down Leakage Current (nA)
V
COM
(V)
2nd line
25 °C
-40 °C
V+ = V
IN
= GND
85 °C
10
100
1000
10000
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
10 000
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Axis Title
1st line
2nd line
2nd line
I+ - Supply Current (μA)
V
IN
(V)
2nd line
V+ = 3 V
V+ = 5 V
V+ = 2 V
0
0.5
1
1.5
2
2.5
-40-20 0 20406080100
I
COM(PD)
Power Down Leakage Current (nA)
Temperature (°C)
2nd line
V+ = V
IN
= GND,
V
COM
= +3 V