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BZA856A,115

P1-P3P4-P6P7-P9P10-P12
2000 Sep 25 3
NXP Semiconductors Product data sheet
Quadruple ESD transient voltage
suppressor
BZA800A-series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. DC working current limited by P
tot(max)
.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
I
Z
working current T
amb
= 25 °C − note 1 mA
I
F
continuous forward current T
amb
= 25 °C − 200 mA
I
FSM
non-repetitive peak forward current t
p
= 1 ms; square pulse − 3.75 A
P
tot
total power dissipation T
amb
= 25 °C − 335 mW
P
ZSM
non repetitive peak reverse power
dissipation:
square pulse; t
p
= 1 ms; see Fig.3
BZA856A, BZA862A, BZA868A, − 24 W
BZA820A − 17 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient all diodes loaded 370 K/W
2000 Sep 25 4
NXP Semiconductors Product data sheet
Quadruple ESD transient voltage
suppressor
BZA800A-series
ELECTRICAL CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage I
F
= 200 mA − − 1.3 V
I
R
reverse current
BZA856A V
R
= 3 V − − 2 000 nA
BZA862A V
R
= 4 V − − 700 nA
BZA868A V
R
= 4.3 V − − 200 nA
BZA820A V
R
= 15 V − − 100 nA
V
Z
working voltage I
Z
= 1 mA
BZA856A 5.32 5.6 5.88 V
BZA862A 5.89 6.2 6.51 V
BZA868A 6.46 6.8 7.14 V
BZA820A 19 20 21 V
r
diff
differential resistance I
Z
= 1 mA
BZA856A − − 400 Ω
BZA862A − − 300 Ω
BZA868A − − 200 Ω
BZA820A − − 125 Ω
S
Z
temperature coefficient I
Z
= 1 mA
BZA856A − −0.2 − mV/K
BZA862A − 1.8 − mV/K
BZA868A − 3 − mV/K
BZA820A − 16 − mV/K
C
d
diode capacitance f = 1 MHz; V
R
= 0
BZA856A − − 240 pF
BZA862A − − 200 pF
BZA868A − − 180 pF
BZA820A − − 50 pF
I
ZSM
non-repetitive peak reverse current t
p
= 1 ms; T
amb
= 25 °C
BZA856A − − 3.2 A
BZA862A − − 2.9 A
BZA868A − − 2.6 A
BZA820A − − 0.6 A
2000 Sep 25 5
NXP Semiconductors Product data sheet
Quadruple ESD transient voltage
suppressor
BZA800A-series
handbook, halfpage
10
1
MGT583
10
−2
10
−1
110
t
p
(ms)
I
ZSM
(A)
BZA856A
BZA862A
BZA868A
BZA820A
10
−1
Fig.2 Maximum non-repetitive peak reverse
current as a function of pulse time.
handbook, halfpage
10
2
10
1
MGT584
BZA856A, BZA862A, BZA868A
BZA820A
10
−2
10
−1
110
t
p
(ms)
P
ZSM
(W)
Fig.3 Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
P
ZSM
= V
ZSM
× I
ZSM
.
V
ZSM
is the non-repetitive peak reverse voltage at I
ZSM
.
handbook, halfpage
05 15
200
0
160
MGT585
10
120
80
40
V
R
(V)
C
d
(pF)
BZA856A
BZA862A
BZA868A
BZA820A
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
T
j
= 25 °C; f = 1 MHz.
handbook, halfpage
0 50 100 150
400
300
100
0
200
MGT586
T
amb
(
°
C)
P
tot
(mW)
Fig.5 Power derating curve.
P1-P3P4-P6P7-P9P10-P12

BZA856A,115

Mfr. #:
Buy BZA856A,115
Manufacturer:
Nexperia
Description:
TVS Diodes / ESD Suppressors DIODE ARRAY TAPE-7
Lifecycle:
New from this manufacturer.
Delivery:
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