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1PMT30AT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 10
1 Publication Order Number:
1PMT5.0AT3/D
1PMT5.0AT1G/T3G Series
Zener Transient
Voltage Suppressor
POWERMITE
®
Package
The 1PMT5.0AT1G/T3G Series is designed to protect voltage
sensitive components from high voltage, high energy transients.
Excellent clamping capability, high surge capability, low Zener
impedance and fast response time. The advanced packaging
technique provides for a highly efficient micro miniature, space
saving surface mount with its unique heatsink design. The
POWERMITE has the same thermal performance as the SMA while
being 50% smaller in footprint area, and delivering one of the lowest
height profiles (1.1 mm) in the industry. Because of its small size, it
is ideal for use in cellular phones, portable devices, business
machines, power supplies and many other industrial/consumer
applications.
Specification Features:
• Stand−off Voltage: 5.0 V − 58 V
• Peak Power − 200 W @ 1 ms (1PMT5.0A − 1PMT36A)
− 175 W @ 1 ms (1PMT40A − 1PMT58A)
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage
• Response Time is Typically < 1 ns
• ESD Rating of Class 3 (> 16 kV) per Human Body Model
• Low Profile − Maximum Height of 1.1 mm
• Integral Heatsink/Locking Tabs
• Full Metallic Bottom Eliminates Flux Entrapment
• Small Footprint − Footprint Area of 8.45 mm
2
• POWERMITE is JEDEC Registered as DO−216AA
• Lead Orientation in Tape: Cathode (Short) Lead to Sprocket Holes
• Cathode Indicated by Polarity Band
• These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MOUNTING POSITION: Any
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
5 − 58 V
200 W PEAK POWER
Device Package Shipping
†
ORDERING INFORMATION
POWERMITE
CASE 457
12
1: CATHODE
2: ANODE
1
2
1PMTxxAT3G POWERMITE
(Pb−Free)
12,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
1PMTxxAT1G POWERMITE
(Pb−Free)
3,000/Tape & Reel
MARKING DIAGRAM
1
CATHODE
2
ANODE
M = Date Code
Mxx = Specific Device Code
(See Table on Page 3)
G =Pb−Free Package
MxxG
M
1PMT5.0AT1G/T3G Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Maximum P
pk
Dissipation, (PW−10/1000 ms) (Note 1) (1PMT5.0A − 1PMT36A)
P
pk
200 W
Maximum P
pk
Dissipation, (PW−10/1000 ms) (Note 1) (1PMT40A − 1PMT58A)
P
pk
175 W
Maximum P
pk
Dissipation, (PW−8/20 ms) (Note 1)
P
pk
1000 W
DC Power Dissipation @ T
A
= 25°C (Note 2)
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
°P
D
°
R
q
JA
500
4.0
248
°mW
mW/°C
°C/W
Thermal Resistance, Junction−to−Lead (Anode)
R
q
Janode
35 °C/W
Maximum DC Power Dissipation (Note 3)
Thermal Resistance, Junction−to−Tab (Cathode)
°P
D
°
R
q
Jcathode
3.2
23
W
°C/W
Operating and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse at T
A
= 25°C.
2. Mounted with recommended minimum pad size, DC board FR−4.
3. At Tab (Cathode) temperature, T
tab
= 75°C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 4) = 35 A)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
Uni−Directional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
1PMT5.0AT1G/T3G Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
L
= 30°C unless otherwise noted, V
F
= 1.25 Volts @ 200 mA)
Device*
Marking
V
RWM
V
BR
@ I
T
(V) (Note 6) I
T
I
R
@ V
RWM
V
C
@ I
PP
I
PP
(A)
(Note 5) Min Nom Max (mA)
(mA)
(V) (Note 7)
1PMT5.0AT1G, T3G MKE 5.0 6.4 6.7 7.0 10 50 9.2 21.7
1PMT7.0AT1G, T3G MKM 7.0 7.78 8.2 8.6 10 30 12 16.7
1PMT12AT1G, T3G MLE 12 13.3 14.0 14.7 1.0 1.0 19.9 10.1
1PMT16AT1G, T3G MLP 16 17.8 18.75 19.7 1.0 1.0 26 7.7
1PMT18AT1G, T3G MLT 18 20.0 21.0 22.1 1.0 1.0 29.2 6.8
1PMT22AT1G, T3G MLX 22 24.4 25.6 26.9 1.0 1.0 35.5 5.6
1PMT24AT1G, T3G MLZ 24 26.7 28.1 29.5 1.0 1.0 38.9 5.1
1PMT26AT1G, T3G MME 26 28.9 30.4 31.9 1.0 1.0 42.1 4.8
1PMT28AT1G, T3G MMG 28 31.1 32.8 34.4 1.0 1.0 45.4 4.4
1PMT30AT1G, T3G MMK 30 33.3 35.1 36.8 1.0 1.0 48.4 4.1
1PMT33AT1G, T3G MMM 33 36.7 38.7 40.6 1.0 1.0 53.3 3.8
1PMT36AT1G, T3G MMP 36 40.0 42.1 44.2 1.0 1.0 58.1 3.4
1PMT40AT1G, T3G MMR 40 44.4 46.8 49.1 1.0 1.0 64.5 2.7
1PMT48AT1G, T3G MMX 48 53.3 56.1 58.9 1.0 1.0 77.4 2.3
1PMT51AT1G, T3G MMZ 51 56.7 59.7 62.7 1.0 1.0 82.4 2.1
1PMT58AT1G, T3G MNG 58 64.4 67.8 71.2 1.0 1.0 93.6 1.9
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
5. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (V
RWM
) which should be equal to or greater
than the DC or continuous peak operating voltage level.
6. V
BR
measured at pulse test current I
T
at ambient temperature of 25°C.
7. Surge current waveform per Figure 2 and derate per Figure 4.
*The “G’’ suffix indicates Pb−Free package.
P1-P3P4-P6

1PMT30AT1G

Mfr. #:
Buy 1PMT30AT1G
Manufacturer:
ON Semiconductor
Description:
ESD Suppressors / TVS Diodes 30V 200W Powermite Unidirectional
Lifecycle:
New from this manufacturer.
Delivery:
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