SUM85N15-19-E3 Datasheet SUM85N15-19-E3 | P1-P3

FEATURES

D TrenchFETr Power MOSFET

D 175_C Junction Temperature

D New Low Thermal Resistance Package

D 100% R

g

Tested

APPLICATIONS

D Primary Side Switch

D Automotive

− 42-V EPS and ABS

− DC/DC Conversion

− Motor Drives

SUM85N15-19

Vishay Siliconix

Document Number: 71703

S-32523—Rev. B, 08-Dec-03

www.vishay.com

1

N-Channel 150-V (D-S) 175_C MOSFET

PRODUCT SUMMARY

V

(BR)DSS

(V) r

DS(on)

(W) I

D

(A)

150 0.019 @ V

GS

= 10 V 85

a

D

G

S

N-Channel MOSFET

TO-263

SDG

Top View

Ordering Information: SUM85N15-19

SUM85N15-19-E3 (Lead Free)

ABSOLUTE MAXIMUM RATINGS (T

C

= 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit

Drain-Source Voltage V

DS

150

Gate-Source Voltage V

GS

"20

V

Continuous Drain Current (T

J

=

175

_

C)

T

C

= 25_C

I

D

85

a

C

on

ti

nuous

D

ra

i

n

C

urren

t (T

J

=

175_C)

T

C

= 125_C

I

D

50

a

A

Pulsed Drain Current I

DM

180

A

Avalanche Current I

AR

50

Repetitive Avalanche Energy

b

L = 0.1 mH E

AR

125 mJ

Maximum Power Dissipation

b

T

C

= 25_C

P

D

375

c

W

Maximum Power Dissipation

b

T

A

= 25_C

d

P

D

3.75

W

Operating Junction and Storage Temperature Range T

J

, T

stg

−55 to 175 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit

Junction-to-Ambient PCB Mount (TO-263)

d

R

thJA

40

_C/W

Junction-to-Case (Drain) R

thJC

0.4

_C/W

Notes

a. Package limited.

b. Duty cycle v 1%.

c. See SOA curve for voltage derating.

d. When mounted on 1” square PCB (FR-4 material).

SUM85N15-19

Vishay Siliconix

www.vishay.com

2

Document Number: 71703

S-32523—Rev. B, 08-Dec-03

SPECIFICATIONS (T

J

=25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V

(BR)DSS

V

DS

= 0 V, I

D

= 250 mA 150

V

Gate-Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 mA 2 4

V

Gate-Body Leakage I

GSS

V

DS

= 0 V, V

GS

= "20 V

"100 nA

V

DS

= 150 V, V

GS

= 0 V 1

Zero Gate Voltage Drain Current I

DSS

V

DS

= 150 V, V

GS

= 0 V, T

J

= 125_C 50

mA

g

DSS

V

DS

= 150 V, V

GS

= 0 V, T

J

= 175_C 250

m

On-State Drain Current

a

I

D(on)

V

DS

w 5 V, V

GS

= 10 V 120 A

V

GS

= 10 V, I

D

= 30 A 0.015 0.019

Drain-Source On-State Resistance

a

r

DS(on)

V

GS

= 10 V, I

D

= 30 A, T

J

= 125_C 0.038

W

DS(on)

V

GS

= 10 V, I

D

= 30 A, T

J

= 175_C 0.050

Forward Transconductance

a

g

fs

V

DS

= 15 V, I

D

= 30 A 25 S

Dynamic

b

Input Capacitance C

iss

4750

Output Capacitance C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz

530 pF

Reverse Transfer Capacitance C

rss

220

Total Gate Charge

c

Q

g

76 110

Gate-Source Charge

c

Q

gs

V

DS

= 75 V, V

GS

= 10 V, I

D

= 85 A

21

nC

Gate-Drain Charge

c

Q

gd

DS

,

GS

,

D

26

Gate Resistance R

g

0.5 1.8 3.0 W

Turn-On Delay Time

c

t

d(on)

22 35

Rise Time

c

t

r

V

DD

= 75 V, R

L

= 0.9 W

170 250

ns

Turn-Off Delay Time

c

t

d(off)

V

DD

= 75 V

,

R

L

= 0

.

9 W

I

D

^ 85 A, V

GEN

= 10 V, R

g

= 2.5 W

40 60

ns

Fall Time

c

t

f

170 250

Source-Drain Diode Ratings and Characteristics (T

C

= 25_C)

b

Continuous Current I

S

85

A

Pulsed Current I

SM

180

A

Forward Voltage

a

V

SD

I

F

= 85 A, V

GS

= 0 V

1.0 1.5 V

Reverse Recovery Time t

rr

130 200 ns

Peak Reverse Recovery Current I

RM(REC)

I

F

= 50 A, di/dt = 100 A/ms

8 12 A

Reverse Recovery Charge Q

rr

0.52 1.2 mC

Notes

a. Pulse test; pulse width v 300 ms, duty cycle v 2%.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

SUM85N15-19

Vishay Siliconix

Document Number: 71703

S-32523—Rev. B, 08-Dec-03

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

1000

2000

3000

4000

5000

6000

7000

0 25 50 75 100 125 150

0

4

8

12

16

20

0 25 50 75 100 125 150

0

30

60

90

120

150

180

0 20 40 60 80 100 120

0.00

0.01

0.02

0.03

0.04

0 20 40 60 80 100 120

0

30

60

90

120

150

180

01234567

0

30

60

90

120

150

180

0246810

Output Characteristics Transfer Characteristics

Capacitance Gate Charge

Transconductance On-Resistance vs. Drain Current

V

DS

− Drain-to-Source Voltage (V) V

GS

− Gate-to-Source Voltage (V)

− Drain Current (A)I

D

− Gate-to-Source Voltage (V)

Q

g

− Total Gate Charge (nC)

I

D

− Drain Current (A)

V

DS

− Drain-to-Source Voltage (V)

C − Capacitance (pF)

V

GS

− Transconductance (S)g

fs

25_C

−55_C

T

C

= 125_C

V

DS

= 75 V

I

D

= 85 A

V

GS

= 10 thru 7 V

V

GS

= 10 V

C

iss

C

oss

T

C

= −55_C

25_C

125_C

4 V

− On-Resistance (r

DS(on)

W )

− Drain Current (A)I

D

I

D

− Drain Current (A)

6 V

C

rss

5 V

SUM85N15-19-E3

SUM85N15-19-E3

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