2SA2007
Transistors
High-speed Switching Transistor (
−
60V,
−
12A)
2SA2007
!
Features
1) High switching speed.
(Typ. tf
=
0.15
µ
s at Ic
= −
6A)
2) Low saturation voltage.
(Typ. V
CE(sat)
= −
0.2V at I
C
/ I
B
= −
6A /
−
0.3A)
3) Wide SOA. (safe operating area)
4) Complements the 2SC5526.
!
External dimensions
(Units : mm)
ROHM : TO-220FN
(2) Collector
(
Drain
)
(3) Emitter
(
Source
)
(1) Base
(
Gate
)
0.75
0.8
2.54
(
1
)
(
3
)
(
2
)
(
1
)
2.54
(
3
)
(
2
)
5.0
8.0
14.0
15.0
12.0
1.3
1.2
10.0
3.2
φ
2.6
4.5
2.8
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
−100
−60
−5
−12
2
25
150
−55 ∼ +150
Unit
V
V
V
A
−20 A(Pulse)
W
W(Tc=25°C)
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collectorpowerdissipation
Junction temperature
Storage temperature
!
Packaging specifications and h
FE
Type 2SA2007
TO-220FN
F
500
Package
h
FE
Code
Basic ordering unit (pieces)
−
!
Electrical characteristics
(Ta = 25
°
C)
Min.
Typ.
Max. Unit
Conditions
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
Cob
−5
−
−
−
160
−
−
−
−
−
−
−
−
80
250
−
−
−10
−10
−0.3
320
−
−
V
V
µA
µA
V
−
MHz
pF
I
C
=
−50µA
BV
CEO
−60 −−V
I
C
=
−1mA
I
E
=
−50µA
V
CB
=
−100V
V
EB
=
−5V
I
C
/I
B
=
−6A/−0.3A
−−−0.5 V
I
C
/I
B
=
−8A/−0.4A
V
BE(sat)
−−
−1.5
V
I
C
/I
B
=
−8A/−0.4A
−−−1.2 V
I
C
/I
B
=
−6A/−0.3A
h
FE
V
CE
=
−2V , I
C
=
−2A
V
CE
=
−10V , I
E
= 1
A , f
=
30MHz
V
CB
=
−10V , I
E
=
0A , f
=
1MHz
ton
−
−
0.3
µs
I
C
=
−6A , R
L
= 5
Ω
tstg
−
−
1.5 µsI
B1
=
−I
B2
=
−0.3A
tf
−
−
0.3
µs
V
CC
−30V
Parameter
BV
CBO
Symbol
−100
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Storage time
Turn-on time
Fall time
