Table 15: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision H)
Values are for the MT41K256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
1
783 738 693 mA
Operating current 1: One bank ACTIVATE-to-READ-to-
PRECHARGE
I
DD1
1
963 918 873 mA
Precharge power-down current: Slow exit I
DD2P0
2
216 216 216 mA
Precharge power-down current: Fast exit I
DD2P1
2
666 576 486 mA
Precharge quiet standby current I
DD2Q
2
756 666 576 mA
Precharge standby current I
DD2N
2
774 684 612 mA
Precharge stanby ODT current I
DD2NT
1
576 531 486 mA
Active power-down current I
DD3P
2
846 756 666 mA
Active standby current I
DD3N
2
936 846 756 mA
Burst read operating current I
DD4R
1
1503 1368 1233 mA
Burst write operating current I
DD4W
1
1503 1368 1233 mA
Refresh current I
DD5B
1
1818 1773 1728 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
216 216 216 mA
Self refresh temperature current (SRT-enabled): MAX
T
C
= 95°C
I
DD6ET
2
270 270 270 mA
All banks interleaved read current I
DD7
1
2403 2268 2133 mA
Reset current I
DD8
2
252 252 252 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
.
2. All ranks in this I
DD
condition.
Table 16: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision M)
Values are for the MT41K256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
1
648 603 558 mA
Operating current 1: One bank ACTIVATE-to-READ-to-
PRECHARGE
I
DD1
1
783 738 693 mA
Precharge power-down current: Slow exit I
DD2P0
2
216 216 216 mA
Precharge power-down current: Fast exit I
DD2P1
2
594 504 414 mA
Precharge quiet standby current I
DD2Q
2
594 504 414 mA
Precharge standby current I
DD2N
2
630 540 450 mA
Precharge stanby ODT current I
DD2NT
1
468 423 378 mA
Active power-down current I
DD3P
2
846 756 666 mA
Active standby current I
DD3N
2
936 846 756 mA
Burst read operating current I
DD4R
1
1368 1233 1098 mA
2GB, 4GB (x72, DR) 240-Pin 1.35V DDR3 RDIMM
I
DD
Specifications
PDF: 09005aef83ad1130
ksf18c256_512x72pdz.pdf – Rev. D 6/11 EN
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
