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IXFN80N48

P1-P2
© 2000 IXYS All rights reserved
Features
International standard packages
miniBLOC, with Aluminium nitride
isolation
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA 480 V
V
GH(th)
V
DS
= V
GS
, I
D
= 8 mA 2 4 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±200 nA
I
DSS
V
DS
= V
DSS
T
J
= 25°C 100 mA
V
GS
= 0 V T
J
= 125°C2mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5  I
D25
45 mW
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 480 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MW 480 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C, Chip capability 80 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
320 A
I
AR
T
C
= 25°C80A
E
AR
T
C
= 25°C64mJ
E
AS
T
C
= 25°C6J
dv/dt I
S
£ I
DM
, di/dt £ 100 A/ms, V
DD
£ V
DSS
, 5 V/ns
T
J
£ 150°C, R
G
= 2 W
P
D
T
C
= 25°C 700 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
V
ISOL
50/60 Hz, RMS t = 1 min 2500 V~
I
ISOL
£ 1 mA t = 1 s 3000 V~
M
d
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.
Weight 30 g
HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
98724 (05/31/00)
D
S
G
S
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate D = Drain
S = Source
Either Source terminal of miniBLOC can be used
as Main or Kelvin Source
IXFN 80N48 V
DSS
= 480 V
I
D25
= 80 A
R
DS(on)
= 45 mW
Preliminary data sheet
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 80N48
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
V
DS
= 15 V; I
D
= 0.5  I
D25
, pulse test 50 70 S
C
iss
9890 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 1750 pF
C
rss
460 pF
t
d(on)
61 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
70 ns
t
d(off)
R
G
= 1 W (External), 102 ns
t
f
27 ns
Q
g(on)
380 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
80 nC
Q
gd
173 nC
R
thJC
0.18 K/W
R
thCK
0.05 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 80 A
I
SM
Repetitive; 320 A
pulse width limited by T
JM
V
SD
I
F
= I
S
, V
GS
= 0 V, 1.3 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
t
rr
I
F
= 50A, -di/dt = 100 A/ms, V
R
= 100 V 250 ns
Q
RM
1.2 mC
I
RM
8A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
P1-P2

IXFN80N48

Mfr. #:
Buy IXFN80N48
Manufacturer:
Description:
MOSFET N-CH 480V 80A SOT-227B
Lifecycle:
New from this manufacturer.
Delivery:
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