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IRFIZ46N

P1-P3P4-P6P7-P9
HEXFET
®
Power MOSFET
IRFIZ46N
PD - 9.1306A
8/25/97
V
DSS
= 55V
R
DS(on)
= 0.020Ω
I
D
= 33A
S
D
G
TO-220 FULLPAK
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
Parameter Min. Typ. Max. Units
R
θJC
Junction-to-Case –––– –––– 3.3
R
θJA
Junction-to-Ambient –––– –––– 65 °C/W
Thermal Resistance
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 33
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 23 A
I
DM
Pulsed Drain Current  180
P
D
@T
C
= 25°C Power Dissipation 45 W
Linear Derating Factor 0.3 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy  230 mJ
I
AR
Avalanche Current 16 A
E
AR
Repetitive Avalanche Energy 4.5 mJ
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
IRFIZ46N
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.017 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.020 Ω V
GS
= 10V, I
D
= 19A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 16 ––– ––– S V
DS
= 25V, I
D
= 28A
––– ––– 25 V
DS
= 55V, V
GS
= 0V
––– ––– 250 V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -20V
Q
g
Total Gate Charge ––– ––– 61 I
D
= 28A
Q
gs
Gate-to-Source Charge ––– ––– 13 nC V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 24 V
GS
= 10V, See Fig. 6 and 13 
t
d(on)
Turn-On Delay Time ––– 12 ––– V
DD
= 28V
t
r
Rise Time ––– 80 ––– I
D
= 28A
t
d(off)
Turn-Off Delay Time ––– 43 ––– R
G
= 12Ω
t
f
Fall Time ––– 52 ––– R
D
= 0.98Ω, See Fig. 10 
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 1500 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 450 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 160 ––– ƒ = 1.0MHz, See Fig. 5
C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz
nH
µA
nA
I
DSS
Drain-to-Source Leakage Current
I
GSS
L
S
Internal Source Inductance ––– –––
ns
S
D
G
4.5
7.5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
–––
L
D
Internal Drain Inductance
–––
–––
–––
pF
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 19A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 72 110 ns T
J
= 25°C, I
F
= 28A
Q
rr
Reverse Recovery Charge ––– 210 310 nC di/dt = 100A/µs

Source-Drain Ratings and Characteristics
A
––– ––– 180
––– ––– 33
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
t=60s, ƒ=60Hz
Uses IRFZ46N data and test conditions
I
SD
≤ 28A, di/dt ≤ 240A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
V
DD
= 25V, starting T
J
= 25°C, L = 410µH
R
G
= 25Ω, I
AS
= 28A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
IRFIZ46N
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20µs PULSE WIDTH
T = 25°C
C
A
4.5V
1
10
100
1000
0.1 1 10 100
4.5V
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20µs PULSE WIDTH
T = 175°C
C
A
1
10
100
1000
45678910
T = 25°C
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
T = 175°C
J
A
V = 25V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
2.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 28A
D
T
J
T
J
P1-P3P4-P6P7-P9

IRFIZ46N

Mfr. #:
Buy IRFIZ46N
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 55V 33A TO220FP
Lifecycle:
New from this manufacturer.
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