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SI4563DY-T1-E3

P1-P3P4-P6P7-P9P10-P12
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
www.vishay.com
7
Vishay Siliconix
Si4563DY
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
- 3
10
- 2
1
10
100010
- 1
10
- 4
100
1
0.1
0.01
0.5
0.2
0.1
0.05
Single Pulse
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 120 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Duty Cycle = 0.5
0.02
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.5
www.vishay.com
8
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
Vishay Siliconix
Si4563DY
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
4
8
12
16
20
0.0 0.6 1.2 1.8 2.4 3.0
V
GS
= 10 thru 4 V
3 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
048121620
V
GS
= 10 V
I
D
- Drain Current (A)
V
GS
= 4.5 V
R
DS(on)
- On-Resistance (mΩ)
0.030
0.027
0.024
0.021
0.018
0.015
0
2
4
6
8
10
0 1122334455
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
I
D
= 5 A
V
DS
= 20 V
V
DS
= 10 V
V
DS
= 30 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.4
0.8
1.2
1.6
2.0
0.0 0.6 1.2 1.8 2.4 3.0
25 °C
T
C
= 125 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
- 55 °C
C
rss
0
700
1400
2100
2800
3500
0 8 16 24 32 40
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
V
GS
I
D
= 5 A
V
GS
= 10 V
= 4.5 V
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
www.vishay.com
9
Vishay Siliconix
Si4563DY
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.3 0.6 0.9 1.2 1.5
10
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
0.1
100
- 0.3
- 0.2
- 0.1
0.0
0.1
0.2
0.3
0.4
0.5
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
T
J
- Temperature (°C)
V
GS(th)
Variance (V)
I
D
= 5 mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.04
0.08
0.12
0.16
0.20
012345678910
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
T
A
= 25 °C
T
A
= 125 °C
I
D
= 5 A
0
30
50
10
20
Power (W)
Time (s)
40
1100.10.010.001
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
1 ms
T
A
= 25 °C
Single Pulse
10 ms
100 ms
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
>
minimum V
GS
at which R
DS(on)
is specified
1 s
10 s
Limited by R
DS(on)
*
P1-P3P4-P6P7-P9P10-P12

SI4563DY-T1-E3

Mfr. #:
Buy SI4563DY-T1-E3
Manufacturer:
Vishay
Description:
MOSFET N/P-CH 40V 8A 8-SOIC
Lifecycle:
New from this manufacturer.
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