DMP21D0UT-7

DMP21D0UT
D
atasheet Number: DS35297 Rev. 2 - 2
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DMP21D0UT
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
Max
I
D
Max
@ T
A
= 25°C
(Note 4)
-20V
495mΩ @ V
GS
= -4.5V
-0.59A
690mΩ @ V
GS
= -2.5V
-0.50A
960mΩ @ V
GS
= -1.8V
-0.42A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Portable electronics
Features and Benefits
Footprint of just 3mm
2
– less than half the size of SOT23
0.8mm profile – ideal for low profile applications
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate 3KV
Totally Lead-Free & Fully RoHS compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish ; Solderable per MIL-STD-202,
Method 208
Weight: 0.002 grams (approximate)
Ordering Information (Note 3)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
DMP21D0UT-7 PBC 7 8 3,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT523
Equivalent CircuitTop View
Internal Schematic
Bottom View
Source
Gate
Protection
Diode
Gate
Drain
G
S
D
ESD PROTECTED TO 3kV
PBC
YM
PBC = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
DMP21D0UT
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atasheet Number: DS35297 Rev. 2 - 2
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DMP21D0UT
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current
Steady
State
T
A
= 25°C (Note 4)
T
A
= 85°C (Note 4)
T
A
= 25°C (Note 5)
I
D
-0.59
-0.42
-0.65
A
Pulsed Drain Current (Note 6)
I
DM
-5.0 A
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
P
D
0.24 W
Power Dissipation (Note 5)
P
D
0.33 W
Thermal Resistance, Junction to Ambient (Note 4)
R
θJA
525 °C/W
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
383 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
5. Device mounted on 25mm X 25mm FR-4 PCB with high coverage of 2oz copper
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
0.0001 0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (SEC)
Fig. 1 Single Pulse Maximum Power Dissipation
1
0
1
2
3
4
5
6
7
8
9
10
P
(pk),
P
EAK
T
R
ANSIEN
T
P
O
WE
R
(W)
Single Pulse
R = 380°C/W
R (t) = r(t) * R
T - T = P * R (t)
θ
θθ
θ
JA
JA JA
JA JA
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 2 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 380°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
DMP21D0UT
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atasheet Number: DS35297 Rev. 2 - 2
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DMP21D0UT
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-20 - - V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - -1
μA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±10
μA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
- -0.7 - V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS (ON)
- -
495
mΩ
V
GS
= -4.5V, I
D
= -400mA
690
V
GS
= -2.5V, I
D
= -300mA
960
V
GS
= -1.8V, I
D
= -100mA
Forward Transfer Admittance
|Y
fs
|
50 - - mS
V
DS
= -3V, I
D
= -300mA
Diode Forward Voltage
V
SD
- - -1.2 V
V
GS
= 0V, I
S
= -300mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
-
76.5
-
pF
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
-
13.7
-
pF
Reverse Transfer Capacitance
C
rss
-
10.7
-
pF
Gate Resistance
R
g
-
195
-
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
1.5
-
nC
V
GS
= -8V,V
DS
= -15V,I
D
= -1A
Total Gate Charge
Q
g
-
1.0
-
nC
V
GS
= -4.5V, V
DS
= -15V,
I
D
= -1A
Gate-Source Charge
Q
g
s
-
0.2
-
nC
Gate-Drain Charge
Q
g
d
-
0.3
-
nC
Turn-On Delay Time
t
D
(
on
)
-
7.1
-
ns
V
DS
= -10V, -I
D
= 1A
V
GS
= -4.5V, R
G
= 6
Turn-On Rise Time
t
r
-
8.0
-
ns
Turn-Off Delay Time
t
D
(
off
)
-
31.7
-
ns
Turn-Off Fall Time
t
f
-
18.5
-
ns
Notes: 7. Short duration pulse test used to minimize self-heating effect.
012345
Fig. 3 Typical Output Characteristic
-V , DRAIN-SOURCE VOLTAGE (V)
DS
0
0.5
1.0
1.5
2.0
-I , D
AIN
EN
(A)
D
V = -1.2V
GS
V = -1.5V
GS
V = -2.0V
GS
V = -2.5V
GS
V = -3.0V
GS
V = -4.5V
GS
V = -4.0V
GS
V = -1.8V
GS
0 0.5 1.0 1.5 2.0 2.5 3.0
Fig. 4 Typical Transfer Characteristic
-V , GATE-SOURCE VOLTAGE (V)
GS
0
0.5
1.0
1.5
2.0
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -5V
DS

DMP21D0UT-7

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
MOSFET 20V P-Ch Enh FET PD 0.24W MIN RDSon
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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