DMP21D0UT
D
atasheet Number: DS35297 Rev. 2 - 2
1 of 7
www.diodes.com
March 2012
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Diodes Incorporated
DMP21D0UT
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
Max
I
D
Max
@ T
A
= 25°C
(Note 4)
-20V
495mΩ @ V
GS
= -4.5V
-0.59A
690mΩ @ V
GS
= -2.5V
-0.50A
960mΩ @ V
GS
= -1.8V
-0.42A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Portable electronics
Features and Benefits
• Footprint of just 3mm
2
– less than half the size of SOT23
• 0.8mm profile – ideal for low profile applications
• Low Gate Threshold Voltage
• Fast Switching Speed
• ESD Protected Gate 3KV
• Totally Lead-Free & Fully RoHS compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT523
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish ; Solderable per MIL-STD-202,
Method 208
• Weight: 0.002 grams (approximate)
Ordering Information (Note 3)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
DMP21D0UT-7 PBC 7 8 3,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT523
Equivalent CircuitTop View
Internal Schematic
Bottom View
Source
Gate
Protection
Diode
Gate
Drain
G
S
D
ESD PROTECTED TO 3kV
PBC
YM
PBC = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)