Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
AUIRFZ48Z
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
AUIRFZ48Z/ZS
4
www.irf.com
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
0.1
1
10
100
1000
V
DS
, D
rain-
to-S
ource Vol
tage (
V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
30
μ
s PUL
SE WIDTH
Tj
= 25°
C
4.5V
0.1
1
10
100
1000
V
DS
, D
rain-
to-S
ource Vol
tage (
V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
30
μ
s PUL
SE WIDTH
Tj
= 175°
C
4.5V
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4
5
6
7
8
9
10
V
GS
, G
ate-t
o-Sour
ce Volt
age (V
)
1.0
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
T
J
= 25°
C
T
J
= 175°
C
V
DS
= 25V
30
μ
s PUL
SE WIDTH
0
1
02
03
04
0
I
D
,D
rain-
to-S
ource Cur
rent (
A)
0
10
20
30
40
50
60
G
f
s
,
F
o
r
w
a
r
d
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
T
J
= 25°
C
T
J
= 175°
C
V
DS
= 10V
AUIRFZ48Z/ZS
www.irf.com
5
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, D
rain-
to-S
ource Vol
tage (
V)
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHO
RT
ED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0
1
02
03
04
05
0
Q
G
Tot
al Gat
e Char
ge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 44V
V
DS
= 28V
V
DS
= 11V
I
D
= 37A
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
SD
, S
ource-t
o-Dr
ain Vol
tage (
V)
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
1
10
100
V
DS
, D
rain-
to-S
ource Vol
tage (
V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1msec
10msec
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
100
μ
sec
Tc =
25°C
Tj
= 175°
C
Si
ngle P
ulse
a
nce
AUIRFZ48Z/ZS
6
www.irf.com
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
25
50
75
100
125
150
175
T
C
, C
ase Temperat
ure (°
C)
0
10
20
30
40
50
60
70
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
T
J
, Junct
ion T
emperatur
e (°
C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 37A
V
GS
= 10V
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
1
, R
ectangular
Pul
se Durat
ion (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D =
0.50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Notes
:
1. Du
ty
Fac
to
r D = t1
/t2
2. P
eak Tj
= P dm x Z
thj
c + T
c
Ri (°C/W)
τ
i (sec)
0.9848 0.000451
0.6546 0.002487
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
R
1
R
1
R
2
R
2
τ
τ
C
Ci
i
/
Ri
Ci=
τ
i
/
Ri
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
AUIRFZ48Z
Mfr. #:
Buy AUIRFZ48Z
Manufacturer:
Infineon Technologies
Description:
MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
AUIRFZ48Z
AUIRFZ48ZS