ESDALC6V1-5P6

November 2007 Rev 3 1/8
8
ESDALC6V1-5P6
ESD protection for high speed interface
Features
Diode array topology
Low capacitance (12 pF typical)
Lead-free package
Benefits
Low capacitance uni-directional ESD
protection.
Low PCB space consuming, 2.5 mm
2
max.
footprint
Low leakage current
High reliability offered by monolithic integration
Complies with the following standards
IEC 61000-4-2 level 4:
8 kV (contact discharge)
15 kV (air discharge)
MIL STD 883G-Method 3015-7: class3B
Human body model
Applications
Where transient overvoltage protection in ESD
sensitive equipment is required, such as:
Computers
Printers
Communication systems
Cellular phone handsets and accessories
Video equipment
Description
The ESDALC6V1-5P6 is a monolithic array
designed to protect up to 5 lines against ESD
transients.
The device is ideal for high speed interface
applications where both reduced printed circuit
board space and power absorption capability are
required.
Figure 1. ESDALC6V1-5P6 functional
diagram
SOT666
www.st.com
Characteristics ESDALC6V1-5P6
2/8
1 Characteristics
Table 1. Absolute ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
V
PP
(1)
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Peak pulse voltage
IEC 61000-4-2 contact discharge
IEC 61000-4-2 air discharge
± 8
± 15
kV
P
PP
(1)
Peak pulse power dissipation (8/20 µs) T
j
initial = T
amb
30 W
I
PP
Peak pulse current (8/20 µs) 2.5 A
T
j
Junction temperature 125 °C
T
stg
Storage temperature range -55 to +150 °C
T
L
Maximum lead temperature for soldering during 10 s 260 °C
T
OP
Operating temperature range - 40 + 125 °C
Table 2. Electrical characteristics (T
amb
= 25 °C)
Symbol Parameter
V
RM
Stand-off voltage
V
BR
Breakdown voltage
V
CL
Clamping voltage
I
RM
Leakage current
I
PP
Peak pulse current
αT Voltage temperature coefficient
V
F
Forward voltage drop
C Capacitance
R
d
Dynamic resistance
Parameter Test condition Min Typ Max Unit
V
RRM
Reverse stand-off voltage 5 V
V
BR
I
R
= 1 mA 6.1 7.2 V
I
RM
V
RM
= 3 V 70 nA
V
CL
Non repetitive peak pulse voltage
(8/20 µs)
I
PP
= 1 A 10
V
I
PP
= 2.5 A 14
V
F
I
F
= 10 mA 1 V
R
d
23 Ω
αT
(1)
1. ΔV
BR
= αT x (T
amb
- 25 °C) x V
BR
(25 °C)
I
R
= 1 mA 5 10
-4
/°C
C
V
R
= 0 V DC, F = 1 MHz,
V
osc
= 30 mV rms
12 15 pF
V
I
V
CL
V
BR
V
RM
I
F
V
F
I
RM
I
PP
Slope: 1/R
d
ESDALC6V1-5P6 Characteristics
3/8
Figure 2. Relative variation of peak pulse
power versus initial junction
temperature
Figure 3. Peak pulse power versus
exponential pulse duration
(T
j
initial = 25 °C)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0 25 50 75 100 125 150
P [T initial] / P [T initial=25°C)
PP j PP j
T (°C)
j
10
100
1000
110100
t (µs)
p
P (W)
PP
T initial = 25°C
j
Figure 4. Clamping voltage versus peak
pulse current (typical values)
Figure 5. Relative variation of leakage
current versus junction
temperature (typical values)
Figure 6. Breakdown voltage versus initial
junction temperature
Figure 7. Junction capacitance versus
reverse voltage applied
(typical values)
0.1
1.0
10.0
56789101112131415
V (V)
CL
I (A)
PP
8/20 µs
T initial = 25°C
j
1
10
100
1000
25 50 75 100 125 150
V =3V
R
I [T ] / I [T =25°C]
Rj Rj
T (°C)
j
6.0
7.0
8.0
25 50 75 100 125
V
BR
T (°C)
j
1 mA
C(pF)
0
2
4
6
8
10
12
14
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
V (V)
R

ESDALC6V1-5P6

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
TVS Diodes / ESD Suppressors EMI Filter ESD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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