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MSA-0370

P1-P3P4-P4
Agilent MSA-0370
Cascadable Silicon Bipolar
MMIC Amplifiers
Data Sheet
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 2.8 GHz
• 12.0 dB Typical Gain at
1.0 GHz
• 10.0 dBm Typical P
1dB
at
1.0 GHz
• Unconditionally Stable
(k>1)
• Hermetic Gold-ceramic
Microstrip Package
70 mil Package
Typical Biasing Configuration
C
block
C
block
R
bias
V
CC
>
7 V
V
d
= 5 V
RFC (Optional)
IN OUT
MSA
4
1
2
3
Description
The MSA-0370 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic, high
reliability package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers in
industrial and military applications.
The MSA-series is fabricated using
Agilent’s 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process which
uses nitride self-alignment, ion
implantation, and gold metallization
to achieve excellent performance,
uniformity and reliability. The use
of an external bias resistor for
temperature and current stability
also allows bias flexibility.
2
MSA-0370 Absolute Maximum Ratings
Parameter Absolute Maximum
[1]
Device Current 80 mA
Power Dissipation
[2,3]
425 mW
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200°C
Thermal Resistance
[2,4]
:
θ
jc
= 125°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 8 mW/°C for T
C
> 147°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θ
jc
than do alternate methods.
G
P
Power Gain (|S
21
|
2
) f = 0.1 GHz dB 11.5 12.5 13.5
∆G
P
Gain Flatness f = 0.1 to 1.8 GHz dB ±0.6 ±1.0
f
3 dB
3 dB Bandwidth GHz 2.8
Input VSWR f = 0.1 to 3.0 GHz 1.8:1
Output VSWR f = 0.1 to 3.0 GHz 1.8:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 6.0
P
1 dB
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 10.0
IP
3
Third Order Intercept Point f = 1.0 GHz dBm 23.0
t
D
Group Delay f = 1.0 GHz psec 125
V
d
Device Voltage V 4.5 5.0 5.5
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Notes:
1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current
is on the following page.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol Parameters and Test Conditions: I
d
= 35 mA, Z
O
= 50 Ω Units Min. Typ. Max.
VSWR
3
MSA-0370 Typical Scattering Parameters (Z
O
= 50 Ω, T
A
= 25°C, I
d
= 35 mA)
Freq.
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 .13 –179 12.6 4.27 176 –18.6 .118 2 .09 –14
0.2 .13 –180 12.6 4.25 171 –18.3 .121 2 .10 –29
0.4 .12 –180 12.5 4.21 162 –18.4 .121 4 .12 –52
0.6 .11 –178 12.4 4.17 154 –18.2 .123 6 .14 –70
0.8 .11 –174 12.3 4.11 146 –17.8 .129 8 .17 –82
1.0 .10 –168 12.2 4.06 137 –17.7 .130 8 .20 –92
1.5 .11 –149 11.7 3.85 116 –17.1 .140 11 .24 –114
2.0 .16 –147 11.1 3.57 96 –16.2 .155 11 .27 –134
2.5 .22 –151 10.3 3.27 82 –15.6 .167 14 .27 –146
3.0 .28 –160 9.3 2.91 65 –15.2 .174 11 .27 –159
3.5 .33 –169 8.2 2.58 48 –14.5 .188 7 .26 –163
4.0 .36 –177 7.1 2.27 34 –14.3 .192 3 .25 –162
5.0 .38 163 5.1 1.81 9 –13.8 .203 –5 .23 –153
6.0 .39 132 3.4 1.48 –14 –13.5 .213 –13 .24 –160
S
11
S
21
S
12
S
22
Typical Performance, T
A
= 25°C
(unless otherwise noted)
G
p
(dB)
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25°C, I
d
= 35 mA.
0
2
4
6
8
10
12
14
Gain Flat to DC
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
10
20
30
60
I
d
(mA)
0234561
40
50
T
C
= +125°C
T
C
= +25°C
T
C
= –55°C
I
d
(mA)
Figure 3. Power Gain vs. Current.
4
6
8
10
12
14
G
p
(dB)
15 25 30 40 503520
5.5
5.0
6.0
6.5
7.0
NF (dB)
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
0.1 0.2 0.3 0.5 2.01.0 4.0 0.1 0.2 0.3 0.5 2.01.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
0
3
6
9
12
15
18
P
1 dB
(dBm)
I
d
= 50 mA
I
d
= 20 mA
I
d
= 35 mA
4
5
6
7
11
8
9
10
11
12
13
–55 –25 +25 +85 +125
P
1 dB
(dBm)
NF (dB)
G
p
(dB)
TEMPERATURE (°C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f = 1.0 GHz, I
d
= 35 mA.
NF
G
P
P
1 dB
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
I
d
= 20 mA
I
d
= 35 mA
I
d
= 50 mA
P1-P3P4-P4

MSA-0370

Mfr. #:
Buy MSA-0370
Manufacturer:
Broadcom / Avago
Description:
IC AMP ISM 20MHZ-2.8GHZ 70 MIL
Lifecycle:
New from this manufacturer.
Delivery:
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