DS-25XE041B–062A–6/2015
Addendum
High Temperature Operation (125°C)
This data sheet addendum is to be used in conjunction with the existing AT25XE041B
datasheet specifications. The Adesto AT25XE041B 4Mbit Serial Flash devices will
operate @ 125°C with the following datasheet caveats. All other parameters will meet
the existing datasheet specifications.
The ordering code suffix (CAN# Code) 'HR' or ‘HT’ must be used to ensure correct
operation at this extended temperature range. Adesto will not modify and republish the
current datasheet to reflect the CAN# ordering code or the above caveats. The
standard
AT25XE041B datasheet is available at http://www.adestotech.com.
AT25XE041B
4-Mbit, 1.7V-3.6V Minimum
SPI Serial Flash Memory
DATASHEET (ADDENDUM)
1. Electrical Specifications
1.2 DC, AC, Program and Erase Characteristics
1.1 DC and AC Operating Range
AT25XE041B-xxxHR
Operating Temperature -40C to +125C
Endurance (Maximum) 20,000 Cycles
Symbol Parameter
1.7V to 3.6V 2.3V to 3.6V
Units
Min Typ Max Min Typ Max
I
UDPD
Ultra Deep Power-Down Current .2 .6 .3 .6
I
DPD
Deep Power-Down Current 4.5 40 5 40 µA
I
SB
Standby Current 25 65 25 65 µA
I
CC3
(1)(2)
1. Typical values measured at 1.8V @ 25°C for the 1.7V to 3.6V range.
Active Current, Program Operation 9 11 9 11 mA
I
CC4
(1) (2)
2. Typical values measured at 3.0V @ 25°C for the 2.3V to 3.6V range.
Active Current, Erase Operation 8 10 8 10 mA
f
RDLF
Maximum Clock Frequency for 03h 25 25 MHz
t
PP
Page Program Time (256 Bytes) 1.85 3.75 1.85 3.75 ms
t
BP
Byte Program Time 12 12 µs
t
PE
Page Erase Time 6 20 6 20 ms
t
BLKE
Block Erase Time (4K) 45 75 45 75 ms
Block Erase Time (32K) 360 550 360 550 ms
Block Erase Time (64K) 720 1100 720 1100 ms
t
CHPE
Chip Erase Time 5.5 7.6 5.5 7.6 s
