OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BC847CDXV6T1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 4
1 Publication Order Number:
BC847CDXV6T1/D
BC847CDXV6T1G,
SBC847CDXV6T1G,
BC847CDXV6T5G,
BC848CDXV6T1G
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−563 which is designed for
low power surface mount applications.
Features
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These are Pb−Free Devices
MAXIMUM RATINGS
Rating Symbol BC847 BC848 Unit
Collector − Emitter Voltage V
CEO
45 30 V
Collector − Base Voltage V
CBO
50 30 V
Emitter − Base Voltage V
EBO
6.0 5.0 V
Collector Current − Continuous I
C
100 100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol Max Unit
Total Device Dissipation, (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
357
2.9
mW
mW/°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
R
q
JA
350 °C/W
Characteristic
(Both Junctions Heated)
Symbol Max Unit
Total Device Dissipation, (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
500
4.0
mW
mW/°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
R
q
JA
250 °C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to +150 °C
1. FR−4 @ Minimum Pad
SOT−563
CASE 463A
1
6
Q
1
(1)(2)
(3)
(4) (5) (6)
Q
2
http://onsemi.com
MARKING DIAGRAMS
1x M G
G
BC847CDXV6T1
1x = Device Code
x = G or M
M = Date Code
G =Pb−Free Package
(Note: Microdot may be in either location)
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 10 mA) BC847CDXV6T1, SBC847CDXV6
BC848CDXV6T1
V
(BR)CEO
45
30
−
−
−
−
V
Collector−Emitter Breakdown Voltage
(I
C
= 10 mA, V
EB
= 0) BC847CDXV6T1, SBC847CDXV6
BC848CDXV6T1
V
(BR)CES
50
30
−
−
−
−
V
Collector−Base Breakdown Voltage
(I
C
= 10 mA) BC847CDXV6T1, SBC847CDXV6
BC848CDXV6T1
V
(BR)CBO
50
30
−
−
−
−
V
Emitter−Base Breakdown Voltage
(I
E
= 1.0 mA) BC847CDXV6T1, SBC847CDXV6
BC848CDXV6T1
V
(BR)EBO
6.0
5.0
−
−
−
−
V
Collector Cutoff Current (V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
I
CBO
−
−
−
−
15
5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10 mA, V
CE
= 5.0 V)
(I
C
= 2.0 mA, V
CE
= 5.0 V)
h
FE
−
420
270
520
−
800
−
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Collector−Emitter Saturation Voltage (I
C
= 100 mA, I
B
= 5.0 mA)
V
CE(sat)
−
−
−
−
0.25
0.6
V
Base −Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Base −Emitter Saturation Voltage (I
C
= 100 mA, I
B
= 5.0 mA)
V
BE(sat)
−
−
0.7
0.9
−
−
V
Base −Emitter Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
Base −Emitter Voltage (I
C
= 10 mA, V
CE
= 5.0 V)
V
BE(on)
580
−
660
−
700
770
mV
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
f
T
100 − − MHz
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz) C
obo
− − 1.5 pF
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 Vdc, R
S
= 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
NF
− − 10
dB
ORDERING INFORMATION
Device Specific Marking Package Shipping
†
BC847CDXV6T1G
1G
SOT−563
(Pb−Free)
4000 Units / Tape & Reel
SBC847CDXV6T1G
BC847CDXV6T5G 8000 Units / Tape & Reel
BC848CDXV6T1G
1L
SOT−563
(Pb−Free)
4000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.001
0
100
300
400
600
700
900
1000
0.10.010.0010.0001
0
0.05
0.10
0.15
0.20
0.25
0.30
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.1
1.2
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
200
500
800
V
CE
= 1 V
150°C
25°C
−55°C
I
C
/I
B
= 20
150°C
25°C
−55°C
0.7
0.9
I
C
/I
B
= 20
150°C
25°C
−55°C
0.4
0.7
1.0
V
CE
= 5 V
150°C
25°C
−55°C
P1-P3P4-P5

BC847CDXV6T1G

Mfr. #:
Buy BC847CDXV6T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100mA 50V Dual NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet