1PS66SB82_1PS88SB82_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 13 January 2010 3 of 10
NXP Semiconductors
1PS66SB82; 1PS88SB82
15 V, 30 mA low C
d
Schottky barrier diodes
6. Thermal characteristics
[1] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
[2] Refer to SOT666 standard mounting conditions.
[3] Reflow soldering is the only recommended soldering method.
[4] Refer to SOT363 (SC-88) standard mounting conditions.
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
SOT666
[2][3]
--700K/W
SOT363
[3][4]
--416K/W
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage see Figure 1
[1]
I
F
= 1 mA - - 340 mV
I
F
= 30 mA - - 700 mV
I
R
reverse current V
R
= 1 V; see Figure 2 --0.2μA
r
dif
differential
resistance
I
F
= 5 mA; f = 1 kHz;
see Figure 3
-12-Ω
C
d
diode
capacitance
V
R
= 0 V; f = 1 MHz;
see Figure 4
-1-pF
