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4 - 8
20110916c
MIXA30WB1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
Input Rectifier Bridge D11 - D16
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
RRM
max. repetitive reverse voltage
T
VJ
= 25°C 1600 V
I
FAV
I
DAVM
average forward current
max. average DC output current
sine 180° T
C
= 80°C
rect.; d =
1
/
3
T
C
= 80°C
37
105
A
A
I
FSM
max. forward surge current
t = 10 ms; sine 50 Hz T
VJ
= 25°C
T
VJ
= 125°C
320
280
A
A
I
2
t
I
2
t value for fusing
t = 10 ms; sine 50 Hz T
VJ
= 25°C
T
VJ
= 125°C
510
390
A
2
s
A
2
s
P
tot
total power dissipation
T
C
= 25°C 110 W
V
F
forward voltage
I
F
= 50 A T
VJ
= 25°C
T
VJ
= 125°C
1.34
1.34
1.7 V
V
I
R
reverse current
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= 125°C 0.2
0.02 mA
mA
R
thJC
thermal resistance junction to case
(per diode) 1.1 K/W
Temperature Sensor NTC
Ratings
Symbol Definitions Conditions min. typ. max. Unit
R
25
B
25/50
resistance
T
C
= 25°C 4.75 5.0
3375
5.25 kW
K
Module
Ratings
Symbol Definitions Conditions min. typ. max. Unit
T
VJ
T
VJM
T
stg
operating temperature
max. virtual junction temperature
storage temperature
-40
-40
125
150
125
°C
°C
°C
V
ISOL
isolation voltage
I
ISOL
< 1 mA; 50/60 Hz 2500 V~
CTI
comparative tracking index
-
M
d
mounting torque (M5)
3 6 Nm
d
S
d
A
creep distance on surface
strike distance through air
6
6
mm
mm
R
pin-chip
resistance pin to chip
5 mW
R
thCH
thermal resistance case to heatsink
with heatsink compound 0.02 K/W
Weight
180 g
Equivalent Circuits for Simulation
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
0
R
0
rectifier diode
D8 - D13 T
VJ
= 150°C 0.88
9
V
mW
V
0
R
0
IGBT
T1 - T6 T
VJ
= 150°C 1.1
55
V
mW
V
0
R
0
free wheeling diode
D1 - D6 T
VJ
= 150°C 1.2
27
V
mW
V
0
R
0
IGBT
T7 T
VJ
= 150°C 1.1
153
V
mW
V
0
R
0
free wheeling diode
D7 T
VJ
= 150°C 1.15
170
V
mW
T
C
= 25°C unless otherwise stated
