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SBAV99RWT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2015
November, 2017 − Rev. 10
1 Publication Order Number:
BAV99WT1/D
BAV99W, BAV99RW
Dual Series Switching
Diodes
The BAV99WT1G is a smaller package, equivalent to the
BAV99LT1G.
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
Suggested Applications
• ESD Protection
• Polarity Reversal Protection
• Data Line Protection
• Inductive Load Protection
• Steering Logic
MAXIMUM RATINGS (Each Diode)
Rating
Symbol Value Unit
Reverse Voltage V
R
100 Vdc
Forward Current I
F
215 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
Repetitive Peak Reverse Voltage V
RRM
100 V
Average Rectified Forward Current
(Note 1)
(averaged over any 20 ms period)
I
F(AV)
715 mA
Repetitive Peak Forward Current I
FRM
450 mA
Non−Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 s
I
FSM
2.0
1.0
0.5
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
Device Package Shipping
†
ORDERING INFORMATION
BAV99RWT1
SC−70, CASE 419, STYLE 10
BAV99WT1
SC−70, CASE 419, STYLE 9
3
CATHODE/ANODE
ANODE
1
CATHODE
2
1 2
3
CATHODE/ANODE
CATHODE ANODE
MARKING DIAGRAM
SC−70
CASE 419
BAV99RWT1G SC−70
(Pb−Free)
3,000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
BAV99WT1G SC−70
(Pb−Free)
3,000 / Tape & Reel
www.onsemi.com
SBAV99WT1G SC−70
(Pb−Free)
3,000 / Tape & Reel
SBAV99RWT1G SC−70
(Pb−Free)
3,000 / Tape & Reel
X7 MG
G
A7 = BAV99W
F7 = BAV99RW
M = Date Code
G = Pb−Free Package
1
NSVBAV99WT3G SC−70
(Pb−Free)
10,000 / Tape & Ree
l
BAV99W, BAV99RW
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board, (Note 1) T
A
= 25°C
Derate above 25°C
P
D
200
1.6
mW
mW/°C
Thermal Resistance Junction−to−Ambient
R
q
JA
625 °C/W
Total Device Dissipation Alumina Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−65 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Each Diode)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100 mA)
V
(BR)
100 −
Vdc
Reverse Voltage Leakage Current
(V
R
= 100 Vdc)
(V
R
= 25 Vdc, T
J
= 150°C)
(V
R
= 70 Vdc, T
J
= 150°C)
I
R
−
−
−
1.0
30
50
mAdc
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
C
D
− 1.5
pF
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
V
F
−
−
−
−
715
855
1000
1250
mVdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, i
R(REC)
= 1.0 mAdc) (Figure 1) R
L
= 100 W
t
rr
− 6.0
ns
Forward Recovery Voltage
(I
F
= 10 mA, t
r
= 20 ns)
V
FR
− 1.75
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Notes: (a) A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: (b) Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: (c) t
p
» t
rr
+10 V
2 k
820 W
0.1 mF
DUT
V
R
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; measured
at i
R(REC)
= 1 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAV99W, BAV99RW
www.onsemi.com
3
CURVES APPLICABLE TO EACH DIODE
I
R
, REVERSE CURRENT (A)μ
1000
0.0 0.2
V
F
, FORWARD VOLTAGE (VOLTS)
0.4 0.6 0.8
1.2
10
1.0
0.1
T
A
= 150°C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 50
0.68
0
V
R
, REVERSE VOLTAGE (VOLTS)
0.64
0.60
0.56
0.52
C
D
, DIODE CAPACITANCE (pF)
2468
I
F
, FORWARD CURRENT (mA)
T
A
= 25°C
T
A
= -55°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 55°C
T
A
= 25°C
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
100
1.0
P1-P3P4-P4

SBAV99RWT1G

Mfr. #:
Buy SBAV99RWT1G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching SS SWCH DIO 70V TR
Lifecycle:
New from this manufacturer.
Delivery:
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