SiRA84DP
www.vishay.com
Vishay Siliconix
S17-0222-Rev. A, 13-Feb-17
4
Document Number: 75258
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
2nd line
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
0
0.005
0.010
0.015
0.020
0.025
0246810
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
J
= 25 °C
T
J
= 125 °C
10
100
1000
10000
-1.0
-0.7
-0.4
-0.1
0.2
0.5
-50-25 0 255075100125150
Axis Title
1st line
2nd line
2nd line
V
GS(th)
- Variance (V)
T
J
- Temperature (°C)
2nd line
I
D
= 5 mA
I
D
= 250 µA
10
100
1000
10000
0
40
80
120
160
200
0.001 0.01 0.1 1 10
Axis Title
1st line
2nd line
2nd line
Power (W)
Time (s)
2nd line
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
(1)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
I
DM
limited
Limited by R
DS(on)
(1)
T
A
= 25 °C
Single pulse
BVDSS limited
100 ms
10 ms
1 ms
100 µs
DC
10 s
1 s
I
D
limited
SiRA84DP
www.vishay.com
Vishay Siliconix
S17-0222-Rev. A, 13-Feb-17
5
Document Number: 75258
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating
a
Power, Junction-to-Case Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
10
100
1000
10000
0
16
32
48
64
80
0255075100125150
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
2nd line
Package limited
10
100
1000
10000
0
9
18
27
36
45
0 255075100125150
Axis Title
1st line
2nd line
2nd line
Power (W)
T
C
- Case Temperature (°C)
2nd line
10
100
1000
10000
0
0.5
1.0
1.5
2.0
2.5
0255075100125150
Axis Title
1st line
2nd line
2nd line
Power (W)
T
A
- Ambient Temperature (°C)
2nd line
SiRA84DP
www.vishay.com
Vishay Siliconix
S17-0222-Rev. A, 13-Feb-17
6
Document Number: 75258
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75258
.
10
100
1000
10000
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty Cycle = 0.5
0.2
P
DM
t
1
t
2
1. Duty cycle, D =
2. Per unit base = R
thJA
= 70 °C/W
3. T
JM
-T
A
= P
DM
Z
thJA
(t)
4. Surface mounted
t
1
t
2
Notes:
10
100
1000
10000
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty Cycle = 0.5
0.2

SIRA84DP-T1-GE3

Mfr. #:
Manufacturer:
Vishay
Description:
MOSFET N-CH 30V 60A POWERPAKSO-8
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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