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IXYH50N120C3D1

P1-P3P4-P6P7-P7
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH50N120C3D1
Fig. 7. Transconductance
0
4
8
12
16
20
24
28
32
36
40
44
0 102030405060708090100
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
200 400 600 800 1000 1200
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 5
Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
020406080100120140
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 50A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
ies
C
oes
C
res
Fig. 11. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- K / W
© 2016 IXYS CORPORATION, All Rights Reserved
IXYH50N120C3D1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
1
2
3
4
5
6
5 1015202530
R
G
- Ohms
E
off
- MilliJoules
0
5
10
15
20
25
30
E
on
- MilliJoules
E
off
E
on
T
J
= 150ºC , V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
20
40
60
80
100
120
140
5 1015202530
R
G
- Ohms
t
f i
- Nanoseconds
0
100
200
300
400
500
600
t
d(off)
- Nanoseconds
t
f i
t
d(off)
T
J
= 150ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 100A
I
C
= 50A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
20 30 40 50 60 70 80 90 100
I
C
- Amperes
E
off
- MilliJoules
0
3
6
9
12
15
18
21
E
on
- MilliJoules
E
off
E
on
R
G
= 5
Ω
V
GE
= 15V
V
CE
= 600V
T
J
= 150ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0
1
2
3
4
5
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
4
8
12
16
20
E
on
- MilliJoules
E
off
E
on
R
G
= 5
Ω
V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
0
20
40
60
80
100
120
140
160
20 30 40 50 60 70 80 90 100
I
C
- Amperes
t
f i
- Nanoseconds
80
100
120
140
160
180
200
220
240
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
20
40
60
80
100
120
140
160
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
110
120
130
140
150
160
170
180
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 100A
I
C
= 50A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH50N120C3D1
IXYS REF: IXY_50N120C3D1(6N)05-04-12
Fig. 21. Maximum Transient Thermal Impedance (Diode)
0.0001
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- K / W
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
0
40
80
120
160
200
240
20 30 40 50 60 70 80 90 100
I
C
- Amperes
t
r i
- Nanoseconds
20
24
28
32
36
40
44
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 150ºC, 25ºC
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
0
40
80
120
160
200
240
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
20
24
28
32
36
40
44
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 100A
I
C
= 50A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
50
100
150
200
250
300
350
5 1015202530
R
G
- Ohms
t
r i
- Nanoseconds
15
25
35
45
55
65
75
85
t
d(on)
- Nanoseconds
t
r i
t
d(on)
T
J
= 150ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
P1-P3P4-P6P7-P7

IXYH50N120C3D1

Mfr. #:
Buy IXYH50N120C3D1
Manufacturer:
Littelfuse
Description:
IGBT Transistors XPT 1200V IGBT GenX6 XPT IGBT
Lifecycle:
New from this manufacturer.
Delivery:
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