ZVP1320F
Document number: DS33391 Rev. 4 - 2
4 of 8
www.diodes.com
January 2012
© Diodes Incorporated
ZVP1320F
Product Line o
Diodes Incorporated
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-200 - - V
V
GS
= 0V, I
D
= -1mA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- -
-1
-20
µA
V
DS
= -200V, V
GS
= 0V
V
DS
= -160V, V
GS
= 0V, T
A
= 125°C
Gate-Source Leakage
I
GSS
- - ±20 nA
V
GS
= ±20V, V
DS
= 0V
On-State Drain Current
I
D
on
-100 - - mA
V
GS
= -10V, V
DS
= -15V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
th
-1.5 - -3.5 V
V
DS
= V
GS
, I
D
= -1mA
Static Drain-Source On-Resistance
R
DS
on
- - 80
Ω V
GS
= -10V, I
D
= -50mA
Forward Transconductance
g
fs
25 - - mS
V
DS
= -15V, I
D
= -50mA
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C
iss
- - 50
pF
V
DS
= -25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- - 15
pF
Reverse Transfer Capacitance
C
rss
- - 5
pF
Turn-On Delay Time
t
D
on
- - 8
ns
V
DS
= -25V, I
D
= -50mA
Turn-On Rise Time
t
- - 8
ns
Turn-Off Delay Time
t
D
off
- - 8
ns
Turn-Off Fall Time
t
f
- - 16
ns
Notes: 6. Short duration pulse test used to minimize self-heating effect.
