EGP10CE-E3/54

EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G
www.vishay.com
Vishay General Semiconductor
Revision: 09-Jun-16
1
Document Number: 88582
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Glass Passivated Ultrafast Plastic Rectifier
FEATURES
Superectifier structure for high reliability condition
Cavity-free glass-passivated junction
Ultrafast reverse recovery time
Low forward voltage drop
Low leakage current
Low switching losses, high efficiency
High forward surge capability
Solder dip 275 °C max. 10 s, per JESD 22-B106
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
MECHANICAL DATA
Case: DO-204AL, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
50 V, 100 V, 150 V, 200 V, 300 V, 400 V
I
FSM
30 A
t
rr
50 ns
V
F
0.95 V, 1.25 V
T
J
max. 150 °C
Package DO-204AL (DO-41)
Diode variations Single die
DO-204AL (DO-41)
SUPERECTIFIER
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT
Maximum repetitive peak reverse voltage V
RRM
50 100 150 200 300 400 V
Maximum RMS voltage V
RMS
35 70 105 140 210 280 V
Maximum DC blocking voltage V
DC
50 100 150 200 300 400 V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
A
= 55 °C
I
F(AV)
1.0 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I
FSM
30 A
Operating junction and storage temperature range T
J
, T
STG
-65 to +150 °C
EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G
www.vishay.com
Vishay General Semiconductor
Revision: 09-Jun-16
2
Document Number: 88582
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT
Maximum instantaneous
forward voltage
1.0 A V
F
0.95 1.25 V
Maximum DC reverse
current at rated DC
blocking voltage
T
A
= 25 °C
I
R
5.0
μA
T
A
= 125 °C 100
Maximum reverse
recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
50 ns
Typical junction
capacitance
4.0 V, 1 MHz C
J
22 15 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT
Typical thermal resistance R
JA
(1)
50 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
EGP10D-E3/54 0.337 54 5500 13" diameter paper tape and reel
EGP10D-E3/73 0.337 73 3000 Ammo pack packaging
0
1.0
0 25 50 75 100 125 150 175
Average Forward Rectied Current (A)
Lead Temperature (°C)
0.5
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
0
5
10
15
20
25
30
1 10010
Peak Forward Surge Current (A)
Number of Cycles at 60 Hz
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G
www.vishay.com
Vishay General Semiconductor
Revision: 09-Jun-16
3
Document Number: 88582
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.40.2 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
0.01
0.1
10
1
100
Instantaneous Forward Current (A)
1.8
T
J
= 150 °C
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
EGP10A thru EGP10D
EGP10F and EGP10G
020 6040 10080
0.01
0.1
10
1
100
1000
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (μA)
T
J
= 150 °C
T
J
= 25 °C
T
J
= 100 °C
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 1 10 100
20
10
30
40
50
60
70
0
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
EGP10A thru EGP10D
EGP10F and EGP10G
Transient Thermal Impedance (°C/W)
0.01 0.1 1 10 100
100
10
1
0.1
t - Pulse Duration (s)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
0.107 (2.7)
0.080 (2.0)
DIA.
0.034 (0.86)
0.028 (0.71)
DIA.
• Lead diameter is for sufx “E” part numbers
0.026 (0.66)
0.023 (0.58)
Note

EGP10CE-E3/54

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 150 Volt 1.0A 50ns Glass Passivated
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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