Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
AUIRF1405ZS
P1-P3
P4-P6
P7-P9
P10-P12
AUIRF1405ZS/L
4
2015-11-11
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typic
al Gate Charge vs.
Gate-to-Source Voltage
Fig 8.
Maximum Safe Operating Area
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
1
10
100
V
DS
,
Dr
ai
n-
t
o-
So
ur
ce Vol
t
age (
V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f =
1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHOR
TED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rs
s
C
is
s
0
20
40
60
80
100
120
Q
G
T
o
ta
l G
a
te C
h
arg
e
(n
C)
0.
0
2.
0
4.
0
6.
0
8.
0
10.
0
12.
0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 4
4V
V
DS
= 2
8V
I
D
= 7
5A
0.
0
0.
5
1.
0
1.
5
2.0
2.
5
V
SD
,
Sour
ce-
t
o-
Dr
ai
n Vol
t
age (
V)
0.
10
1.
00
10.
00
100.
00
1000.
00
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
=
25°
C
T
J
=
175°
C
V
GS
= 0
V
1
10
100
1000
V
DS
,
Dr
ai
n
-
t
o-
Sou
r
ce Vol
t
age (
V
)
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1msec
10msec
OPERA
TI
ON I
N
THI
S ARE
A
LI
M
I
TED B
Y R
DS
(
on)
100µsec
Tc = 25°C
Tj
= 175°C
Si
ngl
e Pul
se
AUIRF1405ZS/L
5
2015-11-11
Fig 10.
Normalized On-Resistance
vs. Temperature
Fig 11.
Maximum Effective Transient Thermal Impedance, Jun
c
tion-to-Case
Fig 9.
Maximum Drain Current vs. Case Temperature
25
50
75
100
125
150
175
T
C
,
Case Tem
per
at
ur
e (
°
C)
0
25
50
75
100
125
150
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
T
J
,
Junc
t
ion Temper
at
ur
e (
°
C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 75
A
V
GS
= 1
0V
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
1
,
Rect
angul
ar
Pul
se Dur
at
i
on (
sec)
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.
20
0.
10
D = 0.
50
0.
02
0.
01
0.
05
SI
NGLE PULSE
( THERMAL RESPONSE )
Notes:
1
. Du
ty F
a
cto
r D =
t1/t2
2.
Peak Tj
=
P dm
x Zt
hj
c +
Tc
AUIRF1405ZS/L
6
2015-11-11
Fig 14.
Threshold Voltage vs. Temperature
Fig 12c.
Maximum Avalanche Energy
vs. Drain Current
Fig 12a.
Unclamped Inductive Test Circuit
Fig 12b.
Unclamped Inductive Waveforms
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
t
p
V
(BR)DS
S
I
AS
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
25
50
75
100
125
150
175
Sta
rting
T
J
,
Junct
i
on Tem
per
at
ur
e (
°
C
)
0
100
200
300
400
500
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
T
O
P
31
A
53A
BO
TT
O
M
75A
-75
-50
-25
0
25
50
75
100
125
150
175
200
T
J
,
Temper
at
ur
e (
°
C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
=
250µA
P1-P3
P4-P6
P7-P9
P10-P12
AUIRF1405ZS
Mfr. #:
Buy AUIRF1405ZS
Manufacturer:
Infineon / IR
Description:
MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
AUIRF1405ZS
AUIRF1405ZL
AUIRF1405ZSTRL