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AUIRF1405ZSTRL

P1-P3P4-P6P7-P9P10-P12
AUIRF1405ZS
AUIRF1405ZL
V
DSS
55V
R
DS(on)
max.
4.9m
I
D
150A
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
applications.
1 2015-11-11
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 150
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 110
I
DM
Pulsed Drain Current 600
P
D
@T
C
= 25°C Maximum Power Dissipation 230 W
Linear Derating Factor 1.5 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 270
mJ
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value 420
I
AR
Avalanche Current See Fig.15,16, 12a, 12b A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.65
°C/W
R
JA
Junction-to-Ambient ( PCB Mount, steady state) 40
D
2
Pak
AUIRF1405ZS
TO-262
AUIRF1405ZL
S
D
G
S
D
G
D
Base part number Package Type
Standard Pack
Form Quantity
AUIRF1405ZL TO-262 Tube 50 AUIRF1405ZL
AUIRF1405ZS D
2
-Pak
Tube 50 AUIRF1405ZS
Tape and Reel Left 800 AUIRF1405ZSTRL
Orderable Part Number
G D S
Gate Drain Source
HEXFET
®
Power MOSFET
AUIRF1405ZS/L
2 2015-11-11
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.10mH, R
G
= 25, I
AS
= 75A, V
GS
=10V. Part not recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population, starting T
J
= 25°C, L = 0.10mH, R
G
= 25, I
AS
= 75A, V
GS
=10V.
This is applied to D
2
Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.049 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– 3.7 4.9
m
V
GS
= 10V, I
D
= 75A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
gfs Forward Trans conductance 88 ––– ––– S V
DS
= 25V, I
D
= 75A
I
DSS
Drain-to-Source Leakage Current
––– ––– 20
µA
V
DS
= 55 V, V
GS
= 0V
––– ––– 250 V
DS
= 55V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -200 V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge ––– 120 180
nC
I
D
= 75A
Q
gs
Gate-to-Source Charge ––– 31 ––– V
DS
= 44V
Q
gd
Gate-to-Drain Charge ––– 46 –––
V
GS
= 10V
t
d(on)
Turn-On Delay Time ––– 18 –––
ns
V
DD
= 25V
t
r
Rise Time ––– 110 –––
I
D
= 75A
t
d(off)
Turn-Off Delay Time ––– 48 –––
R
G
= 4.4
t
f
Fall Time ––– 82 –––
V
GS
= 10V
L
D
Internal Drain Inductance ––– 4.5 –––
nH
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 –––
from package
and center of die contact
C
iss
Input Capacitance ––– 4780 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 770 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 410 –––
ƒ = 1.0MHz
C
oss
Output Capacitance ––– 2730 ––– V
GS
= 0V, V
DS
= 1.0V ƒ = 1.0MHz
C
oss
Output Capacitance ––– 600 ––– V
GS
= 0V, V
DS
= 44V ƒ = 1.0MHz
C
oss eff.
Effective Output Capacitance
––– 910 ––– V
GS
= 0V, V
DS
= 0V to 44V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 75
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 600
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C,I
S
= 75A,V
GS
= 0V 
t
rr
Reverse Recovery Time ––– 30 46 ns
T
J
= 25°C ,I
F
= 75A, V
DD
= 25V
Q
rr
Reverse Recovery Charge ––– 30 45 nC
di/dt = 100A/µs 
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
AUIRF1405ZS/L
3 2015-11-11
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 4 Typical Forward Trans conductance
vs. Drain Current
Fig. 1 Typical Output Characteristics
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4 6 8 10 12
V
GS
, Gate-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 25V
20µs PULSE WIDTH
0 25 50 75 100 125 150 175 200
I
D
,Drain-to-Source Current (A)
0
25
50
75
100
125
150
175
200
G
f
s
,
F
o
r
w
a
r
d
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
T
J
= 25°C
T
J
= 175°C
P1-P3P4-P6P7-P9P10-P12

AUIRF1405ZSTRL

Mfr. #:
Buy AUIRF1405ZSTRL
Manufacturer:
Infineon / IR
Description:
MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms
Lifecycle:
New from this manufacturer.
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