SQ3585EV
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Vishay Siliconix
S16-1516-Rev. A, 01-Aug-16
4
Document Number: 75126
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N-CHANNEL TYPICAL CHARACTERISTICS (25 °C unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Source-Drain Diode Forward Voltage
Threshold Voltage
Safe Operating Area, Junction-to-Case
10
100
1000
10000
0.5
0.8
1.1
1.4
1.7
2.0
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
2nd line
I
D
= 1 A
V
GS
= 10 V
V
GS
= 4.5 V
10
100
1000
10000
0.0
0.1
0.2
0.3
0.4
0.5
012345
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
J
= 25 °C
T
J
= 150 °C
10
100
1000
10000
20
22
24
26
28
30
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
2nd line
I
D
= 10 mA
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
2nd line
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
-1.0
-0.7
-0.4
-0.1
0.2
0.5
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
V
GS(th)
Variance (V)
T
J
- Temperature (°C)
2nd line
I
D
= 5 mA
I
D
= 250 µA
0.01
0.1
1
10
0.01 0.1 1 10 100
I
D
- Drain Current (A)
V
DS
-Drain-to-S ource Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
100 ms
Limited by R
DS(on)
*
1 ms
I
DM
Limited
T
C
= 25 °C
Single Pulse
BVDSS Limited
10 ms
1 s, 10 s, DC
I
D
Limited
