AK8771

13
Monolithic Hall E
14
•Please be aware that our products are not intended for use in life support equipment, devices, or systems. Use of our products in such applications requires the
advance written approval of our sales staff.
Certain applications using semiconductor devices may involve potential risks of personal injury, property damage or loss of life. In order to minimize these risks,
adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of our products in such
applications is understood to be fully at the risk of the customer using our devices or systems.
k
AK8771
c
g
n
o
p
VDD
VDD
IOUT
VIN
IIN
TSTG
6.5
0.5
V
DD
0.3
10
125
0.3
0.5
0.3
10
55
V
mA
V
mA
OUT
PDN
PDN
Ta
5.5
85
3.0
1.6
30
V
I
DD1
I
DD2
I
IN
VIH
VIL
VOH
VOL
TPD1
T
PD2
1
6
1
0.3
0.4
100
100
2.5
1
0.7V
DD
VDD0.4
μA
mA
μA
V
V
V
V
μs
μs
IOUT
IOUT
=0.5mA
=+0.5mA
Bop
Brp
Bh
4.01.8
1.8
3.6
4.0
mT
mT
mT
Bop
Brp
Bh
4.21.8
1.8
3.6
4.2
mT
mT
mT
(Ta=25℃ VDD =3.0V
(Ta=25℃ V
DD =3.0V)
(Ta=30∼+85 V
DD =1.65.5V)
●Absolute Maximum Ratings
●Recommended Operating Conditions
●Electrical Characteristics
●Magnetic Characteristics①
●Magnetic Characteristics②
Item
Min. Unit Note
Note
symbol
Max.
Storage temperature
Item
Typ.
Unit
symbol
Min.
Max.
Item Typ. Unit symbol Min. Max.
Item Typ. Unit symbol Min. Max.
Item Typ. Unit symbol Min. Max.
Output current
Input voltage
Input current
Power supply voltage
Operating temperature
Power supply voltage
Current consumption 2
PDN input current
PDN input H voltage
PDN input L voltage
High level output voltage
Low level output voltage
PDN mode transition time 1
PDN mode transition time 2
Current consumption 1
Releasing point
H y s t e r e s i s
Operating point
Releasing point
H y s t e r e s i s
Operating point
Note) The specifications in Magnetic Characteristics ② are design targets.
) Less than +6.5V.
Note) Stress beyond these listed values may cause permanent damage to the device.
PDN=0V
PDN=3V
Active→PDN
PDN→Active
1.10
0.80
0.50
0.22
0.60
1.40
1.70
0.35
0.22
0.50
1.00
(0.125)
0.37
(0.23)
0.20
1.40
0.80
0.60
Sensor Center
GND
V
DD
=3.0V
0.1μF
VDD
PDN
VSS
AK8771
OUT
Bop
Brp
VPDN[V
V
OUT
[V
I
DD
[mA
B[mT
Undefined
TPD2
(<100μs)
t
t
t
t
0
N
0
0
0
S
TPD2
(<100μs)
TPD1
(<100μs)
TPD1
(<100μs)
●Package(Unit:mm)
※Note 1) Sensitive area position referenced to
the center of package within φ0.3mm circle.
Note 2) Tolerances of dimension otherwise noted is
±0.05mm.
Note 3) Hatched area is plated.
Note 4) Center pad area (TAB) should be tied to the
VSS or floating
●Footprint(for reference
No.
1
2
3
4
Pin name
VDD
VSS
PDN
OUT
Function
Power supply
Ground
Power down.
H:Device active
L:Device power down
Output
Note
CMOS Input. This pin has to be
tied to H level when external
power control is not used.
CMOS Output
●Function Timing Chart ●Application Circuit
Note1) During power down mode, output is latched in its
previous state.
Note2) When VDD is supplied, the time from reaching V
DD=1.6V
to the update of the output state is equal to T
PD2.
Functional Timing
CMOS Output
CMOS Input
15
AK8771

AK8771

Mfr. #:
Manufacturer:
Description:
MAGNETIC SWITCH LATCH 4DFN
Lifecycle:
New from this manufacturer.
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