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PHD16N03T,118

P1-P3P4-P6P7-P9P10-P12
PHD16N03T
TrenchMOS™ standard level FET
Rev. 01 — 18 August 2003 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PHD16N03T in SOT428 (D-PAK).
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
[1] It is not possible to make connection to pin 2 of the SOT428 package.
■ Fast Switching ■ TrenchMOS
TM
technology.
■ DC-to-DC converters ■ General purpose switch.
■ V
DS
≤ 30 V ■ I
D
≤ 13.1 A
■ P
tot
≤ 32.6 W ■ R
DSon
≤ 100 mΩ.
Table 1: Pinning - SOT428, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
SOT428 (D-PAK)
2 drain (d)
[1]
3 source (s)
mb mounting base;
connected to drain (d)
MBK091
Top view
13
mb
2
s
d
g
MBB076
Philips Semiconductors
PHD16N03T
TrenchMOS™ standard level FET
Product data Rev. 01 — 18 August 2003 2 of 12
9397 750 11672
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) 25 °C ≤ T
j
≤ 175 °C - 30 V
V
DGR
drain-gate voltage (DC) 25 °C ≤ T
j
≤ 175 °C; R
GS
=20kΩ -30V
V
GS
gate-source voltage (DC) - ±20 V
V
GSM
peak gate-source voltage t
p
≤ 50 µs; pulsed; duty cycle = 25% - ±30 V
I
D
drain current (DC) T
mb
=25°C; V
GS
=10V;Figure 2 and 3 - 13.1 A
T
mb
= 100 °C; V
GS
=10V;Figure 2 - 9.2 A
I
DM
peak drain current T
mb
=25°C; pulsed; t
p
≤ 10 µs; Figure 3 - 52.4 A
P
tot
total power dissipation T
mb
=25°C; Figure 1 - 32.6 W
T
stg
storage temperature −55 +175 °C
T
j
junction temperature −55 +175 °C
Source-drain diode
I
S
source (diode forward) current (DC) T
mb
=25°C - 13.1 A
I
SM
peak source (diode forward) current T
mb
=25°C; pulsed; t
p
≤ 10 µs - 52.4 A
Philips Semiconductors
PHD16N03T
TrenchMOS™ standard level FET
Product data Rev. 01 — 18 August 2003 3 of 12
9397 750 11672
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
T
mb
=25°C; I
DM
is single pulse; V
GS
=10V.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0 50 100 150 200
T
mb
(
°
C)
P
der
(%)
03aa24
0
40
80
120
0 50 100 150 200
T
mb
(
°
C)
I
der
(%)
P
der
P
tot
P
tot 25 C
°
()
-----------------------
100%×= I
der
I
D
I
D25C
°
()
-------------------
100%×=
03an46
1
10
10
2
1 10 10
2
V
DS
(V)
I
D
(A)
DC
10 ms
Limit R
DSon
= V
DS
/ I
D
1 ms
t
p
= 10
µ
s
100
µ
s
P1-P3P4-P6P7-P9P10-P12

PHD16N03T,118

Mfr. #:
Buy PHD16N03T,118
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 30V 13.1A DPAK
Lifecycle:
New from this manufacturer.
Delivery:
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