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PT480FE0000F

P1-P3P4-P6P7-P7
1 Sheet No.: D1-A02001EN
Date March 30, 2007
©SHARP Corporation
PT480FE0000F
PT480FE0000F
Phototransistor
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
■ Features
1. Side view detection type
2. Plastic mold with resin lens
3. Narrow directivity angle
4. Visible light cut-off resin
5. Lead free and RoHS directive component
■ Agency Approvals/Compliance
1. Compliant with RoHS directive (2002/95/EC)
2. Content information about the six substances
specified in “Management Methods for Control of
Pollution Caused by Electronic Information Prod-
ucts Regulation” (popular name: China RoHS)
(Chinese: );
refer to page 6
■ Applications
1. Optoelectronic switches
2. Automatic stroboscopes
3. Office automation equipment
4. Audio visual equipment
5. Home appliances
6. Telecommunication equipment
7. Measuring equipment
8. Tooling machines
9. Computers
Sheet No.: D1-A02001EN
2
PT480FE0000F
■ Outline Dimensions
R0.8 ±0.1
2-C0.5
2.15
2.95
(6°)
1.6
(6°)
(6°)
(6°)
(6°)(6°)
2.8
(2.54)
3.0
0.15
0.2 MAX.
Resin burr
0.5 MAX.
Gate burr
1.0 MAX.
resin burr
0.5 MIN.
17.5
1.4
(1.7)
1.5
4.0
+1.5
-1.0
2 - 0.4
0.5
0.75
1.15
60°
4°
2 - 0.45
2 - 0.87
4°
4°
0.15 MAX.
4°
φ1.5 E. PIN
R0.5
1
2
1
2
1
2
Emitter
Collector
No.
Name
Pin Arrangement
Terminal connection
NOTES:
1. Units: mm
2. Unspecified tolerence: ±0.2 mm
3. ( ): Reference dimensions
4. Package: Visible light cut-off epoxy resin (black)
5. The thin burr thickness (0.05 mm MAX.) and the gate burr (0.5 mm MAX.) are not included in outline dimensions
6. Resin protrusion: 1.0 mm MAX. however, the thin burr adheres to the lead 1.4 mm MAX. from the resin
+0.3
-0.1
+0.3
-0.1
Sheet No.: D1-A02001EN
3
PT480FE0000F
■ Absolute Maximum Ratings
*
1 5 s (MAX.) positioned 1.4 mm from resin edge. See Figure 4.
■ Electro-optical Charactertistics
*
1 Ee: Irradiance by CIE standard light source A (tungsten lamp)
Parameter Symbol Rating Unit
Collector-emitter voltage V
CEO
35 V
Emitter-collector voltage V
ECO
6V
Collector current I
C
20 mA
Collector power dissipation P
C
75 mW
Operating temperature Topr -25 to +85 °C
Storage temperature Tstg -40 to +85 °C
Soldering temperature *1 Tsol 260 °C
Parameter Symbol Conditions *1 MIN. TYP. MAX. Unit
Collector current I
C
Ee = 1 mW/cm
2
, V
CE
= 5 V 0.25 0.8 3.0 mA
Dark current I
CEO
Ee = 0, V
CE
= 20 V – 1.0 100 nA
Collector-emitter saturation voltage V
CE(sat)
Ee = 10 mW/cm
2
, I
C
= 0.5 mA – 0.1 0.4 V
Collector-emitter breakdown voltage BV
CEO
I
C
= 0.1 mA, Ee = 0 35 – – V
Emitter-collector breakdown voltage BV
ECO
I
E
= 0.01 mA, Ee = 0 6 – – V
Peak sensitivity wavelength λp – – 860 – nm
Response time (Rise) tr
V
CE
= 2 V, I
C
= 2 mA,
RL = 100 Ω
–3.0 –µs
Response time (Fall) tf – 3.5 – µs
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
80
70
75
60
50
40
30
20
15
10
0
-25 0 25
Ambient temperature Ta (°C)
Collector power dissipation Pc (mW)
50 75 85100
Fig. 2 Spectral Sensitivity
100
80
Ta = 25°C
60
40
20
0
400 500 600 700
wavelength λ (nm)
800 900 1,000 1,100
Relative sensitivity (%)
(Ta = 25°C)
(Ta = 25°C)
P1-P3P4-P6P7-P7

PT480FE0000F

Mfr. #:
Buy PT480FE0000F
Manufacturer:
Sharp Microelectronics
Description:
Phototransistors PT480 w/ Visible lite cut-off 860nm
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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