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STTH810GY-TR

P1-P3P4-P6P7-P8
This is information on a product in full production.
October 2012 Doc ID 018922 Rev 1 1/8
8
STTH810-Y
Automotive ultrafast recovery - high voltage diode
Datasheet production data
Features
■ AEC-Q101 qualified
■ Ultrafast, soft recovery
■ Very low conduction and switching losses
■ High frequency and/or high pulsed current
operation
■ High reverse voltage capability
■ High junction temperature
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability like automotive applications.
These diodes also fit into auxiliary functions such
as snubber, bootstrap, and demagnetization
applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
Table 1. Device summary
I
F(AV)
8 A
V
RRM
1000 V
T
j
175 °C
V
F
(typ) 1.30 V
t
rr
(typ) 47 ns
K
K
NC
A
A
D
2
PAK
STTH810GY
www.st.com
Characteristics STTH810-Y
2/8 Doc ID 018922 Rev 1
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 1.3 x I
F(AV)
+ 0.05 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 1000 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward current, = 0.5 T
c
= 130 °C 8 A
I
FRM
Repetitive peak forward current t
p
= 5 µs, F = 5 kHz square 100 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 60 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
Operating junction temperature range -40 to +175 °C
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case 2.5 °C/W
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
5
µA
T
j
= 125 °C 2 20
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 8 A
2
VT
j
= 100 °C 1.4 1.8
T
j
= 150 °C 1.3 1.7
1. Pulse test: t
p
= 5 ms, < 2%
2. Pulse test: t
p
= 380 µs, < 2%
STTH810-Y Characteristics
Doc ID 018922 Rev 1 3/8
Table 5. Dynamic characteristics
Symbol Parameter
Test conditions
Min. Typ. Max. Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25 °C
64 85
ns
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25 °C
47 65
I
RM
Reverse recovery current
I
F
= 8 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T
j
= 125 °C
12 16 A
S Softness factor
I
F
= 8 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T
j
= 125 °C
2
t
fr
Forward recovery time
I
F
= 8 A dI
F
/dt = 50 A/µs
V
FR
= 1.5 x V
Fmax
, T
j
= 25 °C
300 ns
V
FP
Forward recovery voltage
I
F
= 8 A, dI
F
/dt = 50 A/µs,
T
j
= 25 °C
5.5 V
Figure 1. Conduction losses versus
average current
Figure 2. Forward voltage drop versus
forward current
P(W)
0
2
4
6
8
10
12
14
16
18
012345678910
=0.05
=0.1
=0.2
=0.5
=1
T
I (A)
F(AV)
I (A)
FM
0
10
20
30
40
50
60
70
80
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
T
j
=25°C
(Maximum values)
T
j
=150°C
(Maximum values)
T
j
=150°C
(Typical values)
V (V)
FM
Figure 3. Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4. Peak reverse recovery current
versus dI
F
/dt (typical values)
Z/R
th(j-c) th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Single pulse
t (s)
p
I (A)
RM
0
5
10
15
20
25
0 50 100 150 200 250 300 350 400 450 500
V
R
=600V
T
j
=125°C
I
F
= 2 x I
F(AV)
I
F
= I
F(AV)
I
F
=0.5 x I
F(AV)
dI /dt(A/µs)
F
P1-P3P4-P6P7-P8

STTH810GY-TR

Mfr. #:
Buy STTH810GY-TR
Manufacturer:
STMicroelectronics
Description:
Rectifiers Ultrafast Recovery 8A 1000V 1.30VF 47ns
Lifecycle:
New from this manufacturer.
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